MBRS3100P Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or www.onsemi.com as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. SCHOTTKY BARRIER RECTIFIERS Features 3.0 AMPERES, 100 VOLTS Small Compact Surface Mountable Package with JBend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Excellent Ability to Withstand Reverse Avalanche Energy Transients GuardRing for Stress Protection SMC 2LEAD CASE 403AC These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM Mechanical Characteristics Case: Epoxy, Molded AYWW Weight: 217 mg (Approximately) B310 Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable B310 = Specific Device Code Lead and Mounting Surface Temperature for Soldering Purposes: A = Assembly Location* 260C Max. for 10 Seconds Y = Year WW = Work Week Cathode Polarity Band = PbFree Package ESD Ratings: (Note: Microdot may be in either location) Machine Model = C * The Assembly Location code (A) is front side Human Body Model = 3B optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION Package Device Shipping MBRS3100PT3G SMC 2Lead 2,500 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: August, 2017 Rev. 2 MBRS3100P/DMBRS3100P MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (At Rated V , T = 100C) 3.0 R L Nonrepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 130 Operating Junction Temperature Range (Note 1) T 65 to +175 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoLead R 11 C/W JL ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) V V F (i = 3.0 A, T = 25C) 0.79 F J (i = 6.0 A, T = 25C) 0.90 F J (i = 3.0 A, T = 125C) 0.62 F J (i = 6.0 A, T = 125C) 0.70 F J Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated dc Voltage, T = 25C) 0.2 J (Rated dc Voltage, T = 125C) 5.0 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2