Product Information

MBRS360T3

MBRS360T3 electronic component of ON Semiconductor

Datasheet
MBRS360T3 4 A, 60 V, SILICON RECTIFIER DIODE

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5814 ea
Line Total: USD 0.58

0 - Global Stock
Ships to you by
Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you by Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

MBRS360T3
ON Semiconductor

1 : USD 0.5814
25 : USD 0.2907
50 : USD 0.2616
75 : USD 0.218
100 : USD 0.1962

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
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MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount www.onsemi.com Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area SCHOTTKY BARRIER metaltosilicon power diode. Stateoftheart geometry features RECTIFIERS epitaxial construction with oxide passivation and metal overlay 3.0 AMPERES, 60 VOLTS contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Features SMC 2LEAD SMB Small Compact Surface Mountable Package with JBend Leads CASE 403AC CASE 403A03 Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction MARKING DIAGRAMS Excellent Ability to Withstand Reverse Avalanche Energy Transients GuardRing for Stress Protection AYWW AYWW B36 B36 NRVBS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable* B36 = Specific Device Code These Devices are PbFree, Halogen Free/BFR Free and are RoHS A = Assembly Location** Compliant Y = Year WW = Work Week Mechanical Characteristics = PbFree Package Case: Epoxy, Molded, Epoxy Meets UL 94 V0 (Note: Microdot may be in either location) Weight: 217 mg (Approximately), SMC **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is 95 mg (Approximately), SMB stamped in the package, the front side assembly code Finish: All External Surfaces Corrosion Resistant and Terminal may be blank. Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: ORDERING INFORMATION 260C Max. for 10 Seconds Device Package Shipping Polarity: Polarity Band on Plastic Body Indicates Cathode Lead MBRS360T3G SMC 2,500 / Device Meets MSL 1 Requirements (PbFree) Tape & Reel ESD Ratings: MBRS360BT3G SMB 2,500 / (PbFree) Tape & Reel Machine Model, C Human Body Model, 3B NRVBS360T3G* SMC 2,500 / (PbFree) Tape & Reel NRVBS360BT3G* SMB 2,500 / (PbFree) Tape & Reel NRVBS360BT3G SMB 2,500 / VF01* (PbFree) Tape & Reel SBRS360BT3G SMB 2,500 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: August, 2017 Rev. 12 MBRS360T3/DMBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 60 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 3.0 T = 137C A F(AV) L 4.0 T = 127C L Nonrepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 125 Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature (Note 1) T 65 to +175 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoLead (Note 2) R C/W JL SMC Package 11 SMB Package 15 Thermal Resistance, JunctiontoAmbient (Note 2) R C/W JA SMC Package 136 SMB Package 145 Thermal Resistance, JunctiontoAmbient (Note 3) R C/W JA SMC Package 71 SMB Package (Note 4) 73 ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 5) V V F (i = 3.0 A, T = 25C) 0.63 F J Maximum Instantaneous Reverse Current (Note 5) i mA R (Rated dc Voltage, T = 25C) 0.03 J (Rated dc Voltage, T = 100C) 3.0 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Mounted with minimum recommended pad size, PC Board FR4. 3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 4. Typical Value 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 5. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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