MBRS540P Surface Mount Schottky Power Rectifier The MBRS540PT3 employs the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features epitaxial construction with oxide passivation and metal www.onsemi.com overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical SCHOTTKY BARRIER to the system. RECTIFIER 5.0 AMPERES, 40 VOLTS Features Small Compact Surface Mountable Package with JBend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Excellent Ability to Withstand Reverse Avalanche Energy Transients SMC 2LEAD GuardRing for Stress Protection CASE 403AC These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM Mechanical Characteristics Case: Epoxy, Molded, Epoxy Meets UL 94 V0 0.125 in AYWW B540 Weight: 217 mg (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable B540 = Specific Device Code Lead and Mounting Surface Temperature for Soldering Purposes: A = Assembly Location* 260C Max. for 10 Seconds Y = Year WW = Work Week Cathode Polarity Band = PbFree Package ESD Rating: (Note: Microdot may be in either location) Machine Model, C (> 400 V) * The Assembly Location code (A) is front side Human Body Model, 3B (> 8000 V) optional. In cases where the Assembly Location is Device Meets MSL 1 Requirements stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION Device Package Shipping MBRS540PT3G SMC 2Lead 2,500 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: August, 2017 Rev. 2 MBRS540P/DMBRS540P MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 40 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 5 A F(AV) (At Rated V , T = 105C) R C Peak Repetitive Forward Current I 10 A FRM (At Rated V , Square Wave, 20 KHz, T = 80C) R C NonRepetitive Peak Surge Current I 190 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature (Note 1) T 65 to +150 C J Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, C/W JunctiontoLead (Note 2) R 12 JL Thermal Resistance, JunctiontoAmbient (Note 2) R 111 JA 2. Rating applies when surface mounted on the minimum pad size recommended. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) V V F (i = 5.0 A, T = 25C) 0.50 F C Maximum Instantaneous Reverse Current (Note 3) i mA R (Rated dc Voltage, T = 25C) 0.3 C (Rated dc Voltage, T = 100C) 15 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.onsemi.com 2