MBT6429DW1T1G ON Semiconductor

MBT6429DW1T1G electronic component of ON Semiconductor
MBT6429DW1T1G ON Semiconductor
MBT6429DW1T1G Bipolar Transistors - BJT
MBT6429DW1T1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MBT6429DW1T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MBT6429DW1T1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MBT6429DW1T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 200mA 55V NPN
Datasheet: MBT6429DW1T1G Datasheet (PDF)
Price (USD)
1868: USD 0.1392 ea
Line Total: USD 260.03 
Availability : 23119
  
Ship by Thu. 14 Aug to Wed. 20 Aug
QtyUnit Price
1868$ 0.1392
3290$ 0.0791
3528$ 0.0737
5587$ 0.0466
5650$ 0.046
6757$ 0.0385
7548$ 0.0345
7605$ 0.0342
7693$ 0.0338
15000$ 0.0323

Availability 23119
Ship by Thu. 14 Aug to Wed. 20 Aug
MOQ : 1868
Multiples : 1
QtyUnit Price
1868$ 0.1392
3290$ 0.0791
3528$ 0.0737
5587$ 0.0466
5650$ 0.046
6757$ 0.0385
7548$ 0.0345
7605$ 0.0342
7693$ 0.0338
15000$ 0.0323


Availability 9877
Ship by Tue. 12 Aug to Thu. 14 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.2875
10$ 0.1738
100$ 0.1044
500$ 0.0724
1000$ 0.0572
3000$ 0.0484
6000$ 0.0429
9000$ 0.0374
24000$ 0.0352


Availability 2405
Ship by Thu. 21 Aug to Tue. 26 Aug
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.1554
50$ 0.121
150$ 0.1038
500$ 0.0614
3000$ 0.0544
6000$ 0.051


Availability 22
Ship by Tue. 12 Aug to Thu. 14 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.294
10$ 0.2366
100$ 0.1372
387$ 0.049
1064$ 0.0462

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MBT6429DW1T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBT6429DW1T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MBT6429DW1T1G is a N-Channel 100V MOSFET produced by ON Semiconductor. It has a 175A rated drain current and a 0.0048 Ohm typical on resistance. The MOSFET has a Trench-FET technology with an integrated Schottky diode. The maximum power dissipation is 6 Watts, with an operating junction temperature of 150°C. This part is primarily used in high side switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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