MBT6429DW1T1G ON Semiconductor

MBT6429DW1T1G electronic component of ON Semiconductor
MBT6429DW1T1G ON Semiconductor
MBT6429DW1T1G Bipolar Transistors - BJT
MBT6429DW1T1G  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of MBT6429DW1T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MBT6429DW1T1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.MBT6429DW1T1G
Manufacturer:ON Semiconductor
Category:Bipolar Transistors - BJT
Description:Transistors Bipolar - BJT 200mA 55V NPN
Datasheet:MBT6429DW1T1G Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1232: USD 0.2111 ea
Line Total: USD 260.08 
Availability : 10509
  
Ship by Tue. 23 Jun to Mon. 29 Jun
QtyUnit Price
1232$ 0.2111
1864$ 0.1395
1882$ 0.1382
2733$ 0.0951
2759$ 0.0942
3598$ 0.0723
3854$ 0.0675
6135$ 0.0423
6735$ 0.0386
  

Availability10509
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 1232
Multiples : 1
QtyUnit Price
1232$ 0.2111
1864$ 0.1395
1882$ 0.1382
2733$ 0.0951
2759$ 0.0942
3598$ 0.0723
3854$ 0.0675
6135$ 0.0423
6735$ 0.0386


Availability8514
Ship by Fri. 19 Jun to Tue. 23 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3
10$ 0.1837
100$ 0.1104
500$ 0.0771
3000$ 0.0605
6000$ 0.0528
9000$ 0.0451
24000$ 0.0407


Availability1556
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.2058
50$ 0.1668
150$ 0.1104
500$ 0.0895
3000$ 0.0814
6000$ 0.0776


Availability1
Ship by Fri. 19 Jun to Tue. 23 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.308
5$ 0.2408
10$ 0.2044
100$ 0.1162
389$ 0.049

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
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Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
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Series
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Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MBT6429DW1T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBT6429DW1T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MBT6429DW1T1G is a N-Channel 100V MOSFET produced by ON Semiconductor. It has a 175A rated drain current and a 0.0048 Ohm typical on resistance. The MOSFET has a Trench-FET technology with an integrated Schottky diode. The maximum power dissipation is 6 Watts, with an operating junction temperature of 150°C. This part is primarily used in high side switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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