The MC1413BDR2G is a high voltage, high current Darlington transistor manufactured by ON Semiconductor. It is a Darlington-connected NPN transistor that provides high current gain (hfe= 1000) with low saturation voltage (Vce sat= 0.9 V) at a breakdown voltage of at least 500 V. For use in transformer-type driver applications, it offers efficient, fast switching performance. It has high input impedance, so that its base current does not burden external circuitry, and it also reduces circuit design time by eliminating the need for additional bias. Additionally, the device is well-suited for use in automated assembly processes thanks to its hermetic packaging and two-gate array construction.