MC74HC86A Quad 2-Input Exclusive OR Gate HighPerformance SiliconGate CMOS The MC74HC86A is identical in pinout to the LS86. The device MC74HC86A MAXIMUM RATINGS SymbolParameter Value Unit This device contains protection circuitry to guard against damage V DC Supply Voltage (Referenced to GND) 0.5 to +7.0 V CC due to high static voltages or electric V DC Input Voltage (Referenced to GND) 0.5 to V + 0.5 V in CC fields. However, precautions must V DC Output Voltage (Referenced to GND) 0.5 to V + 0.5 V out CC be taken to avoid applications of any voltage higher than maximum rated I DC Input Current, per Pin 20 mA in voltages to this highimpedance cir- I DC Output Current, per Pin 25 mA out cuit. For proper operation, V and in I DC Supply Current, V and GND Pins 50 mA V should be constrained to the CC CC out range GND (V or V ) V . in out CC P Power Dissipation in Still Air, SOIC Package 500 mW D Unused inputs must always be TSSOP Package 450 tied to an appropriate logic voltage T Storage Temperature 65 to +150 C stg level (e.g., either GND or V ). CC Unused outputs must be left open. T Lead Temperature, 1 mm from Case for 10 Seconds C L (Plastic DIP, SOIC or TSSOP Package) 260 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Derating: SOIC Package: 7mW/ C from 65 to 125 C TSSOP Package: 6.1 mW/ C from 65 to 125 C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V DC Supply Voltage (Referenced to GND) 2.0 6.0 V CC V , V DC Input Voltage, Output Voltage (Referenced to GND) 0 V V in out CC T Operating Temperature, All Package Types 55 + 125 C A t , t Input Rise and Fall Time V = 2.0 V 0 1000 ns r f CC (Figure 1) V = 4.5 V 0 500 CC V = 6.0 V 0 400 CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Guaranteed Limit 55 to V CC 25 C Symbol Parameter Test Conditions V 85 C 125 C Unit V Minimum HighLevel Input V = 0.1 V or V 0.1 V 2.0 1.5 1.5 1.5 V IH out CC Voltage I 20 A 3.0 2.1 2.1 2.1 out 4.5 3.15 3.15 3.15 6.0 4.2 4.2 4.2 V Maximum LowLevel Input V = 0.1 V or V 0.1 V 2.0 0.5 0.5 0.5 V IL out CC Voltage I 20 A 3.0 0.9 0.9 0.9 out 4.5 1.35 1.35 1.35 6.0 1.8 1.8 1.8 V Minimum HighLevel Output V = V or V 2.0 1.9 1.9 1.9 V OH in IH IL Voltage I 20 A 4.5 4.4 4.4 4.4 out 6.0 5.9 5.9 5.9 V = V or V I 2.4 mA 3.0 2.48 2.34 2.20 in IH IL out I 4.0 mA 4.5 3.98 3.84 3.70 out I 5.2 mA 6.0 5.48 5.34 5.20 out V Maximum LowLevel Output V = V or V 2.0 0.1 0.1 0.1 V OL in IH IL Voltage I 20 A 4.5 0.1 0.1 0.1 out 6.0 0.1 0.1 0.1 V = V or V I 2.4 mA 3.0 0.26 0.33 0.40 in IH IL out I 4.0 mA 4.5 0.26 0.33 0.40 out I 5.2 mA 6.0 0.26 0.33 0.40 out I Maximum Input Leakage Current V = V or GND 6.0 0.1 1.0 1.0 A in in CC I Maximum Quiescent Supply V = V or GND 6.0 1.0 10 40 A CC in CC Current (per Package) I = 0 A out