14 13 12 11 10 9 8 1 2 34567 Hex Inverter MC74VHC04 The MC74VHC04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer www.onsemi.com output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7 V, allowing the interface of 5 V systems MARKING DIAGRAMS to 3 V systems. 14 Features SOIC14 VHC04G High Speed: t = 3.8 ns (Typ) at V = 5 V D SUFFIX PD CC AWLYWW CASE 751A Low Power Dissipation: I = 2 A (Max) at T = 25C 1 CC A 1 High Noise Immunity: V = V = 28% V NIH NIL CC Power Down Protection Provided on Inputs 14 Balanced Propagation Delays VHC TSSOP14 04 Designed for 2 V to 5.5 V Operating Range DT SUFFIX ALYW CASE 948G Low Noise: V = 0.8 V (Max) OLP 1 1 Pin and Function Compatible with Other Standard Logic Families Latchup Performance Exceeds 300 mA A = Assembly Location WL, L = Wafer Lot ESD Performance: HBM > 2000 V Machine Model > 200 V Y = Year Chip Complexity: 36 FETs or 9 Equivalent Gates WW, W = Work Week G or = PbFree Package NLV Prefix for Automotive and Other Applications Requiring (Note: Microdot may be in either location) Unique Site and Control Change Requirements AECQ100 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant FUNCTION TABLE Inputs Outputs 1 2 A Y A1 Y1 A1 V CC L H 3 4 H L A2 Y2 Y1 A6 A2 Y6 5 6 A3 Y3 ORDERING INFORMATION Y2 A5 Y = A Device Package Shipping 9 8 A4 Y4 MC74VHC04DR2G SOIC14 2500 / Tape & A3 Y5 (PbFree) Reel Y3 A4 11 10 MC74VHC04DTR2G TSSOP14 2500 / Tape & A5 Y5 (PbFree) Reel GND Y4 NLV74VHC04DTR2G TSSOP14 2500 / Tape & 13 12 (PbFree) Reel A6 Y6 For information on tape and reel specifications, Figure 2. Pinout: including part orientation and tape sizes, please 14Lead Packages Figure 1. Logic Diagram refer to our Tape and Reel Packaging Specification (Top View) Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: July, 2020 Rev. 7 MC74VHC04/DMC74VHC04 MAXIMUM RATINGS Symbol Parameter Value Unit This device contains protection circuitry to guard against damage V DC Supply Voltage 0.5 to + 7.0 V CC due to high static voltages or electric V DC Input Voltage 0.5 to + 7.0 V in fields. However, precautions must be taken to avoid applications of any V DC Output Voltage 0.5 to V + 0.5 V out CC voltage higher than maximum rated I Input Diode Current 20 mA voltages to this highimpedance cir- IK cuit. For proper operation, V and in I Output Diode Current 20 mA OK V should be constrained to the out range GND (V or V ) V . I DC Output Current, per Pin 25 mA in out CC out Unused inputs must always be I DC Supply Current, V and GND Pins 50 mA CC CC tied to an appropriate logic voltage level (e.g., either GND or V ). P Power Dissipation in Still Air, SOIC Package 500 mW CC D Unused outputs must be left open. TSSOP Package 450 T Storage Temperature 65 to + 150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Derating SOIC Package: 7 mW/ C from 65 to 125 C TSSOP Package: 6.1 mW/ C from 65 to 125 C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V DC Supply Voltage 2.0 5.5 V CC V DC Input Voltage 0 5.5 V in V DC Output Voltage 0 V V out CC T Operating Temperature 40 + 85 C A t , t Input Rise and Fall Time V = 3.3V 0.3V 0 100 ns/V r f CC V = 5.0V 0.5V 0 20 CC DC ELECTRICAL CHARACTERISTICS T = 25C T = 40 to 85C A A V CC V Min Typ Max Min Max Symbol Parameter Test Conditions Unit V Minimum HighLevel 2.0 1.50 1.50 V IH Input Voltage 3.0 to V x 0.7 V x 0.7 CC CC 5.5 V Maximum LowLevel 2.0 0.50 0.50 V IL Input Voltage 3.0 to V x 0.3 V x 0.3 CC CC 5.5 V Minimum HighLevel V = V or V 2.0 1.9 2.0 1.9 V OH in IH IL Output Voltage I = 50A 3.0 2.9 3.0 2.9 OH 4.5 4.4 4.5 4.4 V = V or V in IH IL I = 4mA 3.0 2.58 2.48 OH I = 8mA 4.5 3.94 3.80 OH V Maximum LowLevel V = V or V 2.0 0.0 0.1 0.1 V OL in IH IL Output Voltage I = 50A 3.0 0.0 0.1 0.1 OL 4.5 0.0 0.1 0.1 V = V or V in IH IL I = 4mA 3.0 0.36 0.44 OL I = 8mA 4.5 0.36 0.44 OL I Maximum Input V = 5.5 or GND 0 to 5.5 0.1 0.1 A in in Leakage Current I Maximum Quiescent V = V or GND 5.5 2.0 20.0 A CC in CC Supply Current www.onsemi.com 2