LOT No. LOT No. Ordering number : ENA1922 MCH4016 RF Transistor MCH4016 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =5V, I =0A 1.0 A CBO CB E Emitter Cutoff Current I V =1V, I =0A 1.0 A EBO EB C DC Current Gain h V =5V, I =5mA 60 150 FE CE C Gain-Bandwidth Product f V =5V, I =10mA 8 10 GHz T CE C 2 Forward Transfer Gain S21e V =5V, I =10mA, f=1GHz 15 18 dB CE C Noise Figure NF V =5V, I =10mA, f=1GHz 1.2 1.8 dB CE C Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted. I -- V I -- V C CE C BE 30 30 V =5V CE 25 25 20 20 15 15 10 10 5 5 I =0 A B 0 0 012 46 8 102 0 0.2 0.4 0.6 0.8 1.0 Collector-to-Emitter Voltage, V -- V IT16301 Base-to-Emitter Voltage, V -- V IT16302 CE BE h -- I Cob -- V FE C CB 1000 1.0 V =5V f=1MHz CE 7 5 7 3 5 2 100 3 7 5 2 3 2 10 0.1 253 7 253 7 253 7 25373253 7 257 0.1 1.0 10 100 0.1 1.0 10 100 Collector Current, I -- mA IT16303 Collector-to-Base Voltage, V -- V IT16304 C CB Cre -- V f -- I CB T C 100 1.0 f=1MHz V =5V CE 7 7 f=1GHz 5 5 3 3 2 2 10 0.1 7 7 5 5 3 3 2 2 0.01 1.0 25373253 7 257 23 5 7 23 5 7 0.1 1.0 10 100 1.0 10 100 Collector-to-Base Voltage, V -- V IT16305 IT16306 Collector Current, I -- mA CB C No. A1922-2/10 150 A 100 A 50A 350A 300A 250A 200A 400A 450 A 500 A DC Current Gain, h Collector Current, I -- mA Reverse Transfer Capacitance, Cre -- pF FE C Gain-Bandwidth Product, f -- GHz Output Capacitance, Cob -- pF Collector Current, I -- mA T C