MCR106-6, MCR106-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume consumer applications such as temperature, light and speed control process and remote control, MCR106 6, MCR1068 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase 3.0 C/W R JC Thermal Resistance, JunctiontoAmbient R 75 C/W JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted.) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current I , I DRM RRM 10 (V = Rated V or V R = 1 k )T = 25C A AK DRM RRM GK J 200 T = 110C A J ON CHARACTERISTICS Peak Forward OnState Voltage (Note 3) V 2.0 V TM (I = 4 A Peak) TM Gate Trigger Current (Continuous dc) (Note 4) I A GT (V = 7 Vdc, R = 100 ) 200 AK L (T = 40C) 500 C Gate Trigger Voltage (Continuous dc) (Note 4) V 1.0 V GT (V = 7 Vdc, R = 100 ) AK L Gate Non-Trigger Voltage (Note 4) V 0.2 V GD (V = 12 Vdc, R = 100 , T = 110C) AK L J Holding Current I 5.0 mA H (V = 7 Vdc, Initiating Current = 200 mA, R = 1 k ) AK GK DYNAMIC CHARACTERISTICS Critical RateofRise of OffState Voltage dv/dt 10 V/ s (T = 110C, R = 1 k ) J GK 3. Pulse Test: Pulse Width 1.0 ms, Duty Cycle 1%. 4. R current is not included in measurement. GK ORDERING INFORMATION Device Package Shipping MCR106 6 TO225AA 500 Units / Box MCR106 6G TO225AA 500 Units / Box (Pb Free) MCR106 8 TO225AA 500 Units / Box MCR106 8G TO225AA 500 Units / Box (Pb Free)