Product Information

MJD122T4G

MJD122T4G electronic component of ON Semiconductor

Datasheet
transistors (npn/pnp) npn - darlington 8a 100v to-252-2 (dpak) rohs
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7762 ea
Line Total: USD 0.78

4097 - Global Stock
Ships to you between
Thu. 30 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1567 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

MJD122T4G
ON Semiconductor

1 : USD 0.7091
10 : USD 0.6051
30 : USD 0.5323
100 : USD 0.472
500 : USD 0.4304
1000 : USD 0.418

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Package
LoadingGif

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Additional Infomation About Product

The MJD122T4G is a Darlington transistor configured as an NPN type and manufactured by ON Semiconductor. This transistor has a maximum power dissipation of 8A at 100V and is in a plastic TO-252-2 (DPak) housing that is compliant with RoHS standards. The MJD122T4G contains two transistors, an NPN and an PNP, with gold bonded leads for superior power transfer and low noise performance for your most demanding applications. The NPN transistor has a collector-emitter voltage rating of up to 350V and the PNP transistor has a maximum collector-emitter voltage rating of up to 100V, making it suitable for many discrete voltage regulation applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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