Complementary Plastic
Power Transistors
NPN/PNP Silicon DPAK For Surface
Mount Applications
MJD200 (NPN),
MJD210 (PNP)
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Designed for low voltage, low power, high gain audio
amplifier applications.
SILICON
POWER TRANSISTORS
Features
High DC Current Gain
5 AMPERES
Lead Formed for Surface Mount Applications in Plastic Sleeves
25 VOLTS, 12.5 WATTS
(No Suffix)
Low CollectorEmitter Saturation Voltage
PNP NPN
High CurrentGain Bandwidth Product
COLLECTOR
COLLECTOR
Annular Construction for Low Leakage 2,4
2,4
Epoxy Meets UL 94 V0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
1
1
Unique Site and Control Change Requirements; AECQ101
BASE
BASE
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
3 3
EMITTER
EMITTER
MAXIMUM RATINGS
Rating Symbol Max Unit
4
CollectorBase Voltage V 40 Vdc
CB
1
2
CollectorEmitter Voltage V 25 Vdc
CEO
3
EmitterBase Voltage V 8.0 Vdc
EB
DPAK
Collector Current Continuous I 5.0 Adc
C CASE 369C
STYLE 1
Collector Current Peak I 10 Adc
CM
Base Current I 1.0 Adc
B
MARKING DIAGRAM
Total Power Dissipation P
D
@ T = 25C 12.5 W
C
0.1 W/C
Derate above 25C
AYWW
J2x0G
Total Power Dissipation (Note 1) P
D
1.4 W
@ T = 25C
A
0.011 W/C
Derate above 25C
A = Assembly Location
Operating and Storage Junction T , T 65 to +150 C
J stg
Y = Year
Temperature Range
WW = Work Week
ESD Human Body Model HBM 3B V x = 1 or 0
G=PbFree Package
ESD Machine Model MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
1. These ratings are applicable when surface mounted on the minimum pad
See detailed ordering and shipping information in the package
sizes recommended.
dimensions section on page 6 of this data sheet.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoCase R 10 C/W
JC
Thermal Resistance, JunctiontoAmbient (Note 2) R 89.3 C/W
JA
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
Semiconductor Components Industries, LLC, 2013
1 Publication Order Number:
October, 2019 Rev. 14 MJD200/DMJD200 (NPN), MJD210 (PNP)
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
C
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 3) V Vdc
CEO(sus)
(I = 10 mAdc, I = 0) 25
C B
Collector Cutoff Current I
CBO
(V = 40 Vdc, I = 0) 100 nAdc
CB E
(V = 40 Vdc, I = 0, T = 125C) 100 Adc
CB E J
Emitter Cutoff Current I nAdc
EBO
(V = 8 Vdc, I = 0) 100
BE C
ON CHARACTERISTICS
C Current Gain (Note 3), h
FE
(I = 500 mAdc, V = 1 Vdc)
C CE 70
(I = 2 Adc, V = 1 Vdc)
C CE 45 180
(I = 5 Adc, V = 2 Vdc)
C CE 10
CollectorEmitter Saturation Voltage (Note 3) V Vdc
CE(sat)
(I = 500 mAdc, I = 50 mAdc)
C B 0.3
(I = 2 Adc, I = 200 mAdc)
C B 0.75
(I = 5 Adc, I = 1 Adc)
C B 1.8
BaseEmitter Saturation Voltage (Note 3) V Vdc
BE(sat)
(I = 5 Adc, I = 1 Adc) 2.5
C B
BaseEmitter On Voltage (Note 3) V Vdc
BE(on)
(I = 2 Adc, V = 1 Vdc) 1.6
C CE
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (Note 4) f MHz
T
(I = 100 mAdc, V = 10 Vdc, f = 10 MHz) 65
C CE test
Output Capacitance C pF
ob
(V = 10 Vdc, I = 0, f = 0.1 MHz)
CB E
MJD200 80
MJD210, NJVMJD210T4G 120
3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.
4. f = h f .
T fe test
T T
A C
2.5 25
V
CC
+30 V
2 20 25 s
+11 V R
C
SCOPE
0
R
1.5 15
B
-9 V
D
T (SURFACE MOUNT)
51 1
1 10 A
t , t 10 ns
r f
DUTY CYCLE = 1%
T
C
-4 V
0.5 5
R and R VARIED TO OBTAIN DESIRED CURRENT LEVELS
B C
D MUST BE FAST RECOVERY TYPE, e.g.:
1
0 0
FOR PNP TEST CIRCUIT,
1N5825 USED ABOVE I 100 mA
B
25 50 75 100 125 150
REVERSE ALL POLARITIES
MSD6100 USED BELOW I 100 mA
B
T, TEMPERATURE (C)
Figure 1. Power Derating Figure 2. Switching Time Test Circuit
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2
P , POWER DISSIPATION (WATTS)
D