MJD340G ON Semiconductor

MJD340G electronic component of ON Semiconductor
MJD340G ON Semiconductor
MJD340G Bipolar Transistors - BJT
MJD340G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MJD340G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJD340G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MJD340G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 300 V 500 mA 10MHz 15 W Surface Mount DPAK
Datasheet: MJD340G Datasheet (PDF)
Price (USD)
666: USD 0.3909 ea
Line Total: USD 260.34 
Availability : 2958
  
Ship by Wed. 20 Aug to Tue. 26 Aug
QtyUnit Price
666$ 0.3909
668$ 0.3896
675$ 0.3857
716$ 0.3632
1050$ 0.3358
2025$ 0.3088
5025$ 0.3061

Availability 2473
Ship by Wed. 20 Aug to Tue. 26 Aug
MOQ : 225
Multiples : 75
QtyUnit Price
225$ 0.6171
300$ 0.5237
600$ 0.3852
1200$ 0.3302


Availability 184
Ship by Wed. 20 Aug to Tue. 26 Aug
MOQ : 181
Multiples : 1
QtyUnit Price
181$ 1.4401
419$ 0.6214
471$ 0.5526
573$ 0.4545
1050$ 0.3961
2025$ 0.3634
5025$ 0.3468


Availability 201
Ship by Mon. 18 Aug to Wed. 20 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.868
5$ 0.8008
10$ 0.7308
25$ 0.6762
41$ 0.469


Availability 58
Ship by Wed. 27 Aug to Mon. 01 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.8272
10$ 0.8106
30$ 0.5996
100$ 0.4894


Availability 184
Ship by Wed. 20 Aug to Tue. 26 Aug
MOQ : 181
Multiples : 1
QtyUnit Price
181$ 1.4401
419$ 0.6214
471$ 0.5526
573$ 0.4545
1050$ 0.3961
2025$ 0.3634
5025$ 0.3468


Availability 2958
Ship by Wed. 20 Aug to Tue. 26 Aug
MOQ : 666
Multiples : 1
QtyUnit Price
666$ 0.3909
668$ 0.3896
675$ 0.3857
716$ 0.3632
1050$ 0.3358
2025$ 0.3088
5025$ 0.3061


Availability 2473
Ship by Wed. 20 Aug to Tue. 26 Aug
MOQ : 375
Multiples : 75
QtyUnit Price
375$ 0.7624
300$ 0.8986
450$ 0.6781
600$ 0.561
1200$ 0.4624

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MJD340G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJD340G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJD340 (NPN), MJD350 (PNP) High Voltage Power Transistors DPAK for Surface Mount Applications www.onsemi.com Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. SILICON Features POWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) 0.5 AMPERE Electrically Similar to Popular MJE340 and MJE350 300 VOLTS, 15 WATTS Epoxy Meets UL 94 V0 0.125 in NJV Prefix for Automotive and Other Applications Requiring COLLECTOR COLLECTOR Unique Site and Control Change Requirements AECQ101 2, 4 2, 4 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 1 Compliant BASE BASE MAXIMUM RATINGS 3 3 Rating Symbol Max Unit EMITTER EMITTER CollectorEmitter Voltage V 300 Vdc CEO 4 CollectorBase Voltage V 300 Vdc CB EmitterBase Voltage V 3 Vdc EB 2 1 Collector Current Continuous I 0.5 Adc C 3 Collector Current Peak I 0.75 Adc CM DPAK CASE 369C Total Power Dissipation P D STYLE 1 T = 25C 15 W C Derate above 25C 0.12 W/C MARKING DIAGRAM Total Power Dissipation (Note 1) P D T = 25C 1.56 W A Derate above 25C 0.012 W/C AYWW Operating and Storage Junction T , T 65 to +150 C J stg Temperature Range J3x0G ESD Human Body Model HBM V MJD340 (NPN) 3B MJD350 (PNP) 2 A = Assembly Location ESD Machine Model MM V Y = Year MJD340 (NPN) M4 WW = Work Week MJD350 (PNP) M4 J3x0 = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the x= 4 or 5 device. If any of these limits are exceeded, device functionality should not be G = PbFree Package assumed, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2016 Rev. 12 MJD340/DMJD340 (NPN), MJD350 (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 8.33 C/W JC Thermal Resistance, JunctiontoAmbient (Note 2) R 80 C/W JA Leading Temperature for Soldering Purpose T 260 C L 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) V V CEO(sus) (I = 1 mA, I = 0) 300 C B Collector Cutoff Current I mA CEO (V = 300 V, I = 0) 0.1 CB E Emitter Cutoff Current I mA EBO (V = 3 V, I = 0) 0.1 BE C ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 50 mA, V = 10 V) 30 240 C CE CollectorEmitter Saturation Voltage V V CE(sat) (I = 100 mA, I = 10 mA) 1 C B BaseEmitter On Voltage V V BE(on) (I = 1 A, V = 10 V) 1.5 C CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 50 mA, V = 10 V, f = 10 MHz) 10 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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