MJE270G (NPN), MJE271G (PNP) Complementary Silicon Power Transistors Features MJE270G (NPN), MJE271G (PNP) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) V Vdc CEO(sus) (I = 10 mAdc, I = 0) 100 C B Collector Cutoff Current I mAdc CEO (V = 100 Vdc, I = 0) 1.0 CE B Collector Cutoff Current I mAdc CBO (V = 100 Vdc, I = 0) 0.3 CB E Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 0.1 BE C SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased I Adc S/b (V = 40 Vdc, t = 1.0 s, Nonrepetitive) 375 CE ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 20 mAdc, V = 3.0 Vdc) 500 C CE (I = 120 mAdc, V = 10 Vdc) 1500 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 20 mAdc, I = 0.2 mAdc) 2.0 C B (I = 120 mAdc, I = 1.2 mAdc) 3.0 C B BaseEmitter On Voltage V Vdc BE(on) (I = 120 mAdc, V = 10 Vdc) 2.0 C CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (Note 2) f MHz T (I = 0.05 Adc, V = 5.0 Vdc, f = 1.0 MHz) 6.0 C CE test Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2. f = h f . T fe test 10,000 10 7000 V = 3.0 V CE 5.0 150C 5000 3000 dc 1.0 25C 0.5 - 55C 1000 700 MJE270/MJE271 500 0.1 BONDING WIRE LIMIT 300 0.05 THERMAL LIMIT T = 25C C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 100 0.01 0.015 0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 1.5 1.0 3.0 7.0 10 30 70 100 I , COLLECTOR CURRENT (AMPS) V , COLLECTOR-EMITTER VOLTAGE (VOLTS) C CE Figure 1. DC Current Gain Figure 2. Safe Operating Area