MJE340G Plastic Medium-Power NPN Silicon Transistor This device is useful for highvoltage general purpose applications. Features www.onsemi.com Suitable for Transformerless, LineOperated Equipment High Power Dissipation Rating for High Reliability 0.5 AMPERE These Devices are PbFree and are RoHS Compliant* POWER TRANSISTOR Complementary to MJE350 NPN SILICON MAXIMUM RATINGS 300 VOLTS, 20 WATTS Rating Symbol Value Unit CollectorEmitter Voltage V 300 Vdc CEO SCHEMATIC EmitterBase Voltage V 3.0 Vdc EB COLLECTOR Collector Current Continuous I 500 mAdc C 2, 4 Total Power Dissipation P D 20 W T = 25 C C 0.16 mW/ C Derate above 25 C 3 Operating and Storage Junction T , T 65 to +150 C BASE J stg Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the 1 device. If any of these limits are exceeded, device functionality should not be EMITTER assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase 6.25 C/W JC TO225 CASE 7709 STYLE 1 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit 1 2 3 OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 1.0 mAdc, I = 0) 300 C B MARKING DIAGRAM Collector Cutoff Current I Adc CBO (V = 300 Vdc, I = 0) 100 CB E YWW Emitter Cutoff Current I Adc EBO (V = 3.0 Vdc, I = 0) 100 JE340G EB C ON CHARACTERISTICS DC Current Gain h FE Y = Year (I = 50 mAdc, V = 10 Vdc) 30 240 C CE WW = Work Week Product parametric performance is indicated in the Electrical Characteristics for JE340 = Device Code the listed test conditions, unless otherwise noted. Product performance may not G = PbFree Package be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Package Shipping *For additional information on our PbFree strategy and soldering details, please TO225 500 Units/Box MJE340G download the ON Semiconductor Soldering and Mounting Techniques (PbFree) Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: February, 2017 Rev. 14 MJE340/DMJE340G 32 1.0 28 T = 25C J V I /I = 10 BE(sat) C B 0.8 24 20 V V = 10 V 0.6 BE CE 16 0.4 12 V I /I = 10 CE(sat) C B MJE340 8.0 0.2 4.0 I /I = 5.0 C B 0 0 0 20 40 60 80 100 120 140 160 10 20 30 50 100 200 300 500 T , CASE TEMPERATURE (C) I , COLLECTOR CURRENT (mA) C C Figure 1. Power Temperature Derating Figure 2. On Voltages ACTIVEREGION SAFE OPERATING AREA There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I V 1.0 C CE limits of the transistor that must be observed for reliable 10 s 0.5 operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate.The data of Figure 3 is 0.3 T = 150C 500 s J based on T = 150 C T is variable depending on 1.0 ms J(pk) C 0.2 dc conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T 150 C. At high case 0.1 J(pk) temperatures, thermal limitations will reduce the power that 0.05 can be handled to values less than the limitations imposed by SECOND BREAKDOWN LIMIT second breakdown. BONDING WIRE LIMIT 0.03 THERMAL LIMIT T = 25C C 0.02 SINGLE PULSE 0.01 10 20 30 50 70 100 200 300 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 3. MJE340 www.onsemi.com 2 I , COLLECTOR CURRENT (AMP) C P , POWER DISSIPATION (WATTS) D V, VOLTAGE (VOLTS)