MLD1N06CLT4G ON Semiconductor

MLD1N06CL Preferred Device SMARTDISCRETES MOSFET 1 Amp, 62 Volts, Logic Level N Channel DPAK The MLD1N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be MLD1N06CL UNCLAMPED DRAIN TOSOURCE AVALANCHE CHARACTERISTICS Rating Symbol Value Unit Single Pulse DraintoSource Avalanche Energy Starting T = 25C E 80 mJ J AS ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Internally Clamped) V Vdc (BR)DSS (I = 20 mAdc, V = 0 Vdc) 59 62 65 D GS (I = 20 mAdc, V = 0 Vdc, T = 150C) 59 62 65 D GS J Zero Gate Voltage Drain Current I Adc DSS (V = 45 Vdc, V = 0 Vdc) 5.0 0.6 DS GS (V = 45 Vdc, V = 0 Vdc, T = 150C) 20 DS GS J 6.0 GateSource Leakage Current I Adc GSS (V = 5.0 Vdc, V = 0 Vdc) 5.0 G DS 0.5 (V = 5.0 Vdc, V = 0 Vdc, T = 150C) 20 G DS J 1.0 ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V Vdc GS(th) (I = 250 Adc, V = V ) 1.0 2.0 1.5 D DS GS (I = 250 Adc, V = V , T = 150C) 0.6 1.6 D DS GS J Static DraintoSource OnResistance R DS(on) (I = 1.0 Adc, V = 4.0 Vdc) 0.75 0.63 D GS (I = 1.0 Adc, V = 5.0 Vdc) 0.75 D GS 0.59 (I = 1.0 Adc, V = 4.0 Vdc, T = 150C) 1.9 D GS J 1.1 (I = 1.0 Adc, V = 5.0 Vdc, T = 150C) 1.8 D GS J 1.0 Static SourcetoDrain Diode Voltage (I = 1.0 Adc, V = 0 Vdc) V 1.1 1.5 Vdc S GS SD Static Drain Current Limit I Adc D(lim) (V = 5.0 Vdc, V = 10 Vdc) 2.0 2.75 2.3 GS DS (V = 5.0 Vdc, V = 10 Vdc, T = 150C) 1.1 1.8 GS DS J 1.3 Forward Transconductance (I = 1.0 Adc, V = 10 Vdc) g 1.0 1.4 mhos D DS FS RESISTIVE SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 1.2 2.0 s d(on) Rise Time t 4.0 6.0 r (V = 25 Vdc, I = 1.0 Adc, DD D V = 5.0 Vdc, R = 50 ) GS(on) GS Turn Off Delay Time t 4.0 6.0 d(off) Fall Time t 3.0 5.0 f INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance L nH D (Measured from drain lead 0.25 from package to center of die) 4.5 Internal Source Inductance L nH S (Measured from the source lead 0.25 from package to source bond pad) 7.5 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperature.