X-On Electronics has gained recognition as a prominent supplier of MLD1N06CLT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. MLD1N06CLT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MLD1N06CLT4G ON Semiconductor

MLD1N06CLT4G electronic component of ON Semiconductor
MLD1N06CLT4G ON Semiconductor
MLD1N06CLT4G MOSFETs
MLD1N06CLT4G  Semiconductors

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See Product Specifications
Part No. MLD1N06CLT4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 62V 1A N-Channel
Datasheet: MLD1N06CLT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
13: USD 1.2116 ea
Line Total: USD 15.75 
Availability - 0
MOQ: 13  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 2500
Multiples : 1
2500 : USD 1.3338
2500 : USD 1.3338
2500 : USD 1.3338
2500 : USD 1.3338
2500 : USD 1.3338
5000 : USD 1.3338

0
Ship by Wed. 11 Jun to Mon. 16 Jun
MOQ : 13
Multiples : 1
13 : USD 1.2116

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MLD1N06CLT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MLD1N06CLT4G and other electronic components in the MOSFETs category and beyond.

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MLD1N06CL Preferred Device SMARTDISCRETES MOSFET 1 Amp, 62 Volts, Logic Level N Channel DPAK The MLD1N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be MLD1N06CL UNCLAMPED DRAIN TOSOURCE AVALANCHE CHARACTERISTICS Rating Symbol Value Unit Single Pulse DraintoSource Avalanche Energy Starting T = 25C E 80 mJ J AS ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Internally Clamped) V Vdc (BR)DSS (I = 20 mAdc, V = 0 Vdc) 59 62 65 D GS (I = 20 mAdc, V = 0 Vdc, T = 150C) 59 62 65 D GS J Zero Gate Voltage Drain Current I Adc DSS (V = 45 Vdc, V = 0 Vdc) 5.0 0.6 DS GS (V = 45 Vdc, V = 0 Vdc, T = 150C) 20 DS GS J 6.0 GateSource Leakage Current I Adc GSS (V = 5.0 Vdc, V = 0 Vdc) 5.0 G DS 0.5 (V = 5.0 Vdc, V = 0 Vdc, T = 150C) 20 G DS J 1.0 ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V Vdc GS(th) (I = 250 Adc, V = V ) 1.0 2.0 1.5 D DS GS (I = 250 Adc, V = V , T = 150C) 0.6 1.6 D DS GS J Static DraintoSource OnResistance R DS(on) (I = 1.0 Adc, V = 4.0 Vdc) 0.75 0.63 D GS (I = 1.0 Adc, V = 5.0 Vdc) 0.75 D GS 0.59 (I = 1.0 Adc, V = 4.0 Vdc, T = 150C) 1.9 D GS J 1.1 (I = 1.0 Adc, V = 5.0 Vdc, T = 150C) 1.8 D GS J 1.0 Static SourcetoDrain Diode Voltage (I = 1.0 Adc, V = 0 Vdc) V 1.1 1.5 Vdc S GS SD Static Drain Current Limit I Adc D(lim) (V = 5.0 Vdc, V = 10 Vdc) 2.0 2.75 2.3 GS DS (V = 5.0 Vdc, V = 10 Vdc, T = 150C) 1.1 1.8 GS DS J 1.3 Forward Transconductance (I = 1.0 Adc, V = 10 Vdc) g 1.0 1.4 mhos D DS FS RESISTIVE SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 1.2 2.0 s d(on) Rise Time t 4.0 6.0 r (V = 25 Vdc, I = 1.0 Adc, DD D V = 5.0 Vdc, R = 50 ) GS(on) GS Turn Off Delay Time t 4.0 6.0 d(off) Fall Time t 3.0 5.0 f INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance L nH D (Measured from drain lead 0.25 from package to center of die) 4.5 Internal Source Inductance L nH S (Measured from the source lead 0.25 from package to source bond pad) 7.5 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperature.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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