Product Information

STL92N10F7AG

Name: STL92N10F7AG
Brand: STMicroelectronics
SKU: STL92N10F7AG_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STL92N10F7AG electronic component of STMicroelectronics

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Datasheet

MOSFET Automotive-grade N-channel 100 V, 0.008 Ohm typ., 16 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

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Availability	Price	Quantity
0 - WHS 1 MOQ : 3000 Multiples : 3000 STL92N10F7AG STMicroelectronics	3000 : USD 1.2954	N/A Shipping Restricted

0 - WHS 2 MOQ : 1 Multiples : 1 STL92N10F7AG STMicroelectronics	1 : USD 3.267 10 : USD 1.1588 100 : USD 0.9072 250 : USD 0.8748 500 : USD 0.8089 1000 : USD 0.7398 3000 : USD 0.7203 6000 : USD 0.6934 9000 : USD 0.6653	N/A Shipping Restricted

0 - WHS 3 MOQ : 17 Multiples : 17 STL92N10F7AG STMicroelectronics	17 : USD 0.7639 100 : USD 0.7094 250 : USD 0.6885 500 : USD 0.6747	N/A Shipping Restricted

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Additional Infomation About Product

STL92N10F7AG Automotive-grade N-channel 100 V, 0.008 typ.,16 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features R DS(on) Order code V I P DS D TOT max STL92N10F7AG 100 V 0.0095 16 A 5 W Designed for automotive applications and 1 2 AEC-Q101 qualified 3 4 Among the lowest R on the market DS(on) PowerFLAT 5x6 Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Wettable flank package Figure 1. Internal schematic diagram Applications D(5, 6, 7, 8) 8 7 6 5 Switching applications Description This N-channel Power MOSFET utilizes G(4) STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more 12 3 4 efficient switching. Top View S(1, 2, 3) AM15540v2 Table 1. Device summary Order code Marking Package Packaging TM STL92N10F7AG 92N10F7 PowerFLAT 5x6 Tape and reel October 2015 DocID027022 Rev 2 1/16 This is information on a product in full production. www.st.comContents STL92N10F7AG Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 4.1 PowerFLAT 5x6 WF type R package information . 10 4.2 PowerFLAT 5x6 packing information 13 5 Revision history . 15 2/16 DocID027022 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 16 A 16 A
Vds - Drain-Source Breakdown Voltage 100 V 100 V
Rds On - Drain-Source Resistance 9.5 mOhms 9.5 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 2.5 V 2.5 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 5 W 5 W
Mounting Style Smd/Smt Smd/Smt
Package / Case Powerflat - 8 Powerflat - 8
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage +/- 20 V +/- 20 V
Qg - Gate Charge 45 nC 45 nC
Channel Mode Enhancement Enhancement
Configuration 1 N - Channel 1 N - Channel
Transistor Type 1 N - Channel 1 N - Channel
Brand Stmicroelectronics Stmicroelectronics
Fall Time 13 ns 13 ns
Rise Time 32 ns 32 ns
Typical Turn-Off Delay Time 36 ns 36 ns
Typical Turn-On Delay Time 19 ns 19 ns