MMBD7000L, SMMBD7000L Dual Switching Diode Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable www.onsemi.com These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (EACH DIODE) SOT23 (TO236) Rating Symbol Value Unit CASE 318 STYLE 11 Reverse Voltage V 100 V R Forward Current I 200 mA F 1 2 Forward Surge Current I 1.6 A FSM ANODE CATHODE (60 Hz 1 cycle) 3 CATHODE/ANODE Repetitive Peak Forward Current I 0.5 A FRM (Pulse Wave = 1 sec, Duty Cycle = 66%) Stresses exceeding those listed in the Maximum Ratings table may damage the MARKING DIAGRAM device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS M5C M Characteristic Symbol Max Unit 1 Total Device Dissipation FR5 Board P 225 mW D (Note 1)T = 25C A M5C = Specific Device Code Derate above 25C 1.8 mW/C M = Date Code* Thermal Resistance, Junction to R 556 C/W JA = PbFree Package Ambient (Note: Microdot may be in either location) Total Device Dissipation P 300 mW D *Date Code orientation and/or overbar may Alumina Substrate, (Note 2) vary depending upon manufacturing location. T = 25C A Derate above 25C 2.4 mW/C ORDERING INFORMATION Thermal Resistance, R C/W JA Device Package Shipping JunctiontoAmbient 417 MMBD7000LT1G SOT23 3,000 / Junction and Storage Temperature T , T 55 to +150 C J stg (PbFree) Tape & Reel 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. SMMBD7000LT1G SOT23 3,000 / (PbFree) Tape & Reel MMBD7000LT3G SOT23 10,000 / (PbFree) Tape & Reel SMMBD7000LT3G SOT23 10,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: June, 2017 Rev. 8 MMBD7000LT1/DMMBD7000L, SMMBD7000L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (EACH DIODE) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V Vdc (BR) 100 (I = 100 Adc) (BR) Reverse Voltage Leakage Current Adc (V = 50 Vdc) I 1.0 R R (V = 100 Vdc) I 3.0 R R2 (V = 50 Vdc, 125C) I 100 R R3 Forward Voltage V Vdc F (I = 1.0 mAdc) 0.55 0.7 F (I = 10 mAdc) 0.67 0.82 F (I = 100 mAdc) 0.75 1.1 F Reverse Recovery Time t ns rr (I = I = 10 mAdc) (Figure 1) 4.0 F R Capacitance (V = 0 V) C 1.5 pF R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% DUT i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2