MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G Schottky Barrier Diodes MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V Volts (BR)R (I = 10 A) R MMBD330T1G, SMMBD330T1G 30 MMBD770T1G, SMMBD770T1G 70 Diode Capacitance C pF T (V = 15 Volts, f = 1.0 MHZ) R MMBD330T1G, SMMBD330T1G 0.9 1.5 (V = 20 Volts, f = 1.0 MHZ) R MMBD770T1G, SMMBD770T1G 0.5 1.0 Reverse Leakage I nAdc R (V = 25 V) R MMBD330T1G, SMMBD330T1G 13 200 (V = 35 V) R MMBD770T1G, SMMBD770T1G 9.0 200 Forward Voltage V Vdc F (I = 1.0 mAdc) F MMBD330T1G, SMMBD330T1G 0.38 0.45 (I = 10 mA) 0.52 0.60 F (I = 1.0 mAdc) F MMBD770T1G, SMMBD770T1G 0.42 0.50 (I = 10 mA) 0.70 1.0 F