MMBF170L, NVBF170L MOSFET N-Channel, SOT-23 500 mA, 60 V Features www.onsemi.com NVBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 500 mA, 60 V These Devices are PbFree and are RoHS Compliant R = 5 DS(on) MAXIMUM RATINGS SOT23 Rating Symbol Value Unit CASE 318 DrainSource Voltage V 60 Vdc DSS STYLE 21 DrainGate Voltage V 60 Vdc DGS GateSource Voltage Continuous V 20 Vdc NChannel GS Nonrepetitive (t 50 s) V 40 Vpk p GSM 3 Drain Current Continuous I 0.5 Adc D Pulsed I 0.8 DM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 1 Total Device Dissipation FR5 Board P D (Note 1.) T = 25C 225 mW A Derate above 25C 1.8 mW/C 2 Thermal Resistance, JunctiontoAmbient R 556 C/W JA Junction and Storage Temperature T , T 55 to C J stg +150 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the & PIN ASSIGNMENT device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 3 1. FR5 = 1.0 0.75 0.062 in. Drain 6Z M Gate 1 2 Source 6Z = Specific Device Code M = Date Code = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: May, 2019 Rev. 10 MMBF170LT1/DMMBF170L, NVBF170L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage (V = 0, I = 100 A) V 60 Vdc GS D (BR)DSS GateBody Leakage Current, Forward (V = 15 Vdc, V = 0) I 10 nAdc GSF DS GSS ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (V = V , I = 1.0 mA) V 0.8 3.0 Vdc DS GS D GS(th) Static DrainSource OnResistance (V = 10 Vdc, I = 200 mA) r 5.0 GS D DS(on) OnState Drain Current (V = 25 Vdc, V = 0) I 0.5 A DS GS D(off) DYNAMIC CHARACTERISTICS Input Capacitance C 60 pF iss (V = 10 Vdc, V = 0 V, f = 1.0 MHz) DS GS SWITCHING CHARACTERISTICS (Note 1) TurnOn Delay Time t 10 ns d(on) (V = 25 Vdc, I = 500 mA, R = 50 ) DD D gen Figure 1 TurnOff Delay Time t 10 d(off) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. ORDERING INFORMATION Device Package Shipping MMBF170LT1G SOT23 (TO236) 3000 / Tape & Reel (PbFree) MMBF170LT3G SOT23 (TO236) 10000 / Tape & Reel (PbFree) NVBF170LT1G* SOT23 (TO236) 3000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. +25 V t on t off t t t d(on) r d(off) t f 90% 90% 125 TO SAMPLING OUTPUT V in SCOPE INVERTED PULSE 50 INPUT 10% GENERATOR 20 dB 50 V out V out ATTENUATOR 40 pF 50 INPUT 90% 50% 50% 10% V 50 1 M in PULSE WIDTH (V AMPLITUDE 10 VOLTS) in Figure 1. Switching Test Circuit Figure 2. Switching Waveform www.onsemi.com 2