Darlington Amplifier Transistors NPN Silicon MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* SOT23 (TO236) CASE 318 STYLE 6 MAXIMUM RATINGS COLLECTOR 3 Rating Symbol Value Unit BASE Collector Emitter Voltage V 30 Vdc CES 1 Collector Base Voltage V 30 Vdc CBO Emitter Base Voltage V 10 Vdc EBO EMITTER 2 Collector Current Continuous I 300 mAdc C THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Total Device Dissipation FR5 Board P D 1x M (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C 1 Thermal Resistance, JunctiontoAmbient R 556 C/W JA 1x = Device Code Total Device Dissipation Alumina P D x = M for MMBTA13LT1G, Substrate, (Note 2) T = 25C 300 mW A SMMBTA13LT1G Derate above 25C 2.4 mW/C x = N for MMBTA14LT1G, Thermal Resistance, JunctiontoAmbient 417 C/W R JA SMMBTA14LT1G, T3G M = Date Code* Junction and Storage Temperature T , T 55 to +150 C J stg = PbFree Package Stresses exceeding those listed in the Maximum Ratings table may damage the (Note: Microdot may be in either location) device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Date Code orientation and/or overbar may 1. FR5 = 1.0 0.75 0.062 in. vary depending upon manufacturing location. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. ORDERING INFORMATION Device Package Shipping MMBTA13LT1G, SOT23 3,000 / Tape & Reel (PbFree) SMMBTA13LT1G MMBTA14LT1G, SOT23 3,000 / Tape & Reel (PbFree) SMMBTA14LT1G SMMBTA14LT3G SOT23 10,000 / Tape & (PbFree) Reel *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques For information on tape and reel specifications, Reference Manual, SOLDERRM/D. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: August, 2020 Rev. 7 MMBTA13LT1/DMMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V Vdc (BR)CES (I = 100 Adc, V = 0) 30 C BE Collector Cutoff Current I nAdc CBO (V = 30 Vdc, I = 0) 100 CB E Emitter Cutoff Current I nAdc EBO (V = 10 Vdc, I = 0) 100 EB C ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 10 mAdc, V = 5.0 Vdc) C CE MMBTA13, SMMBTA13 5000 MMBTA14, SMMBTA14 10,000 (I = 100 mAdc, V = 5.0 Vdc) C CE MMBTA13, SMMBTA13 10,000 MMBTA14, SMMBTA14 20,000 Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 100 mAdc, I = 0.1 mAdc) 1.5 C B Base Emitter On Voltage V Vdc BE (I = 100 mAdc, V = 5.0 Vdc) 2.0 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product (Note 4) f MHz T (I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz) 125 C CE 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. f = h f . T fe test R S i n e n IDEAL TRANSISTOR Figure 1. Transistor Noise Model www.onsemi.com 2