PNP General-Purpose Amplifier PZTA56, MMBTA56 General Description This device is designed for generalpurpose amplifier applications www.onsemi.com at collector currents to 300 mA. Sourced from process 73. Features MARKING DIAGRAM C These are PbFree Devices E FSZXYYKK ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A C A56 B (Note 1, Note 2) SOT2234 Symbol Parameter Value Unit CASE 318H V CollectorEmitter Voltage 80 V CES FS = On Semiconductor Logo V CollectorBase Voltage 80 V CBO Z = Assembly Plant Code V EmitterBase Voltage 4.0 V X = Single Digit Numeric Year Code EBO Last Digit of the Calendar Year I Collector Current Continuous 500 mA C YY = Two Digit Weekly Numeric Code T , T Operating and Storage Junction 55 to + 150 C KK = Two Alphanumeric Character Lot Code J STG Temperature Range A56 = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be MARKING DIAGRAM assumed, damage may occur and reliability may be affected. C 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady state limits. ON Semiconductor should be consulted on applications involving pulsed or lowdutycycle operations. E &Y B 2G&E&G SOT233 CASE 318BM &Y = ON Semiconductor Logo 2G = Specific Device Code &E = Designated Space &G = PbFree Package ORDERING INFORMATION Device Package Shipping PZTA56 SOT2234 4000 Tape & Reel MMBTA56 SO233 3000 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1997 1 Publication Order Number: June, 2021 Rev. 2 PZTA56/DPZTA56, MMBTA56 THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) A Max PZTA56 (Note 3) MMBTA56 (Note 4) Symbol Parameter Unit P Total Device Dissipation 1000 350 mW D Derate Above 25 C 8.0 2.8 mW/ C Thermal Resistance, JunctiontoAmbient 125 357 R C/W JA 3. PCB size: FR4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 2 4. Device mounted on FR4 PCB 36 mm x 18 mm x 1.5 mm mounting pad for the collector lead minimum 6cm . ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Test Conditions Min Max Unit V CollectorEmitter Breakdown Voltage (Note 5) I = 1.0 mA, I = 0 80 V (BR)CEO C B V CollectorBase Breakdown Voltage 60 V I = 100 A, I = 0 (BR)CBO C E V EmitterBase Breakdown Voltage I = 100 A, I = 0 4.0 V (BR)EBO E C I Collector CutOff Current V = 60 V, I = 0 0.1 A CES CE B I Collector CutOff Current V = 80 V, I = 0 0.1 A CBO CB E h DC Current Gain I = 10 mA, V = 1.0 V 100 FE C CE I = 100 mA, V = 1.0 V 100 C CE V (sat) CollectorEmitter Saturation Voltage I = 100 mA, I = 10 mA 0.25 V CE C B V (on) BaseEmitter On Voltage I = 100 mA, V = 1.0 V 1.2 V BE C CE f Current Gain Bandwidth Product I = 100 mA, V = 1.0 V, 50 MHz T C CE f = 100 MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse test: pulse width 300 s, duty cycle 2.0%. www.onsemi.com 2