Product Information

MMQA6V8T1G

MMQA6V8T1G electronic component of ON Semiconductor

Datasheet
ESD Suppressors / TVS Diodes 6.8V 150W TVS Quad Array

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0881 ea
Line Total: USD 264.3

5820 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
5820 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 3000
Multiples : 3000

Stock Image

MMQA6V8T1G
ON Semiconductor

3000 : USD 0.0881
6000 : USD 0.079
9000 : USD 0.078
30000 : USD 0.0765
75000 : USD 0.0765
150000 : USD 0.0765

5771 - Warehouse 2


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

MMQA6V8T1G
ON Semiconductor

1 : USD 0.1688
10 : USD 0.1671
25 : USD 0.1583
100 : USD 0.1219
250 : USD 0.1162
500 : USD 0.1104
1000 : USD 0.1081
3000 : USD 0.1081
6000 : USD 0.1081

7327 - Warehouse 3


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

MMQA6V8T1G
ON Semiconductor

1 : USD 0.506
10 : USD 0.3381
100 : USD 0.161
1000 : USD 0.1254
3000 : USD 0.107
9000 : USD 0.0932
24000 : USD 0.0874
45000 : USD 0.0862

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Polarity
Termination Style
Breakdown Voltage
Clamping Voltage
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Voltage
Peak Surge Current
Capacitance
Dimensions
Brand
Channels
Mounting Style
Peak Pulse Power Dissipation
Factory Pack Quantity :
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MMQA, SZMMQA Quad Common Anode Series ESD Protection Diode SC74 Quad Monolithic Common Anode This quad monolithic silicon voltage suppressor is designed for www.onsemi.com applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as SC74 QUAD SURGE computers, printers, business machines, communication systems, PROTECTION 24 WATTS PEAK medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. POWER 5.6 33 VOLTS These devices are ideal for situations where board space is at a premium. Features SC74 Package Allows Four Separate Unidirectional Configurations Peak Power Min. 24 W 1.0 ms (Unidirectional), SC74 per Figure 5 Waveform CASE 318F STYLE 1 Peak Power Min. 150 W 20 s (Unidirectional), per Figure 6 Waveform Maximum Clamping Voltage Peak Pulse Current PIN ASSIGNMENT Low Leakage < 2.0 A ESD Rating of Class 3B (exceeding 16 kV) per the Human Body PIN 1. CATHODE 1 6 2. ANODE Model 3. CATHODE SZ Prefix for Automotive and Other Applications Requiring Unique 2 5 4. CATHODE 5. ANODE Site and Control Change Requirements AECQ101 Qualified and 3 4 6. CATHODE PPAP Capable These Devices are PbFree and are RoHS Compliant* MARKING DIAGRAM xxxM xxx = Specific Device Code M = Date Cade =PbFree Package (Note: Microdot may be in either location) DEVICE MARKING & ORDERING INFORMATION See specific marking and ordering information in the device marking and ordering information table on page 6 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: October, 2017 Rev. 12 MMQA/DMMQA, SZMMQA Quad Common Anode Series THERMAL CHARACTERISTICS (T = 25C Unless Otherwise Noted) A Characteristic Symbol Value Unit Peak Power Dissipation 1.0 ms (Note 1) P W pk T 25C 24 A Peak Power Dissipation 20 s (Note 2) P W pk T 25C 150 A Total Power Dissipation on FR-5 Board (Note 3) P 225 MW D T = 25C 1.8 mW/C A Thermal Resistance from JunctiontoAmbient R 556 C/W JA Total Power Dissipation on Alumina Substrate (Note 4) P D T = 25C 300 MW A Derate above 25C 2.4 mW/C Thermal Resistance from JunctiontoAmbient R 417 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg Lead Solder Temperature Maximum (10 Second Duration) T 260 C L 1. Non-repetitive current pulse per Figure 5 and derate above T = 25C per Figure 4. A 2. Non-repetitive current pulse per Figure 6 and derate above T = 25C per Figure 4. A 3. FR-5 = 1.0 x 0.75 x 0.62 in. 4. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina ELECTRICAL CHARACTERISTICS (T = 25C Unless Otherwise Noted) A UNIDIRECTIONAL (Circuit tied to pins 1, 2, and 5 Pins 2, 3, and 5 Pins 2, 4, and 5 or Pins 2, 5, and 6) (V = 0.9 V Max I = 10 mA) F F Max Max Reverse Capacitance Reverse Leakage 0 Volt Voltage Breakdown Voltage Current Bias, 1 MHz Max I Maximum RSM VZT Max Zener (Note 8) Reverse Temperature (Note 6) Impedance Surge (Clamping Coefficient (V) I I V (Note 7) Current Voltage) of V (pF) ZT R R Z Device ZZT IZT IRSM VRSM Min Nom Max (mA) (nA) (V) ( ) (mA) (A) (V) (mV/C) Min Max (Note 5) MMQA5V6T1G 5.32 5.6 5.88 1.0 2000 3.0 400 3.0 8.0 1.26 MMQA6V2T1G/T3G 5.89 6.2 6.51 1.0 700 4.0 300 2.66 9.0 10.6 MMQA6V8T1G 6.46 6.8 7.14 1.0 500 4.3 300 2.45 9.8 10.9 100 250 MMQA12VT1G 11.4 12 12.6 1.0 75 9.1 80 1.39 17.3 14 MMQA13VT1G 12.4 13 13.7 1.0 75 9.8 80 1.29 18.6 15 MMQA15VT1G 14.3 15 15.8 1.0 75 11 80 1.1 21.7 16 MMQA18VT1G 17.1 18 18.9 1.0 75 14 80 0.923 26 19 MMQA20VT1G/T3G 19 20 21 1.0 75 15 80 0.84 28.6 20.1 MMQA22VT1G 20.9 22 23.1 1.0 75 17 80 0.758 31.7 22 MMQA24VT1G 22.8 24 25.2 1.0 75 18 100 0.694 34.6 25 MMQA27VT1G 25.7 27 28.4 1.0 75 21 125 0.615 39 28 MMQA33VT1G 31.4 33 34.7 1.0 75 25 200 0.504 48.6 37 5. Includes SZ-prefix devices where applicable. 6. V measured at pulse test current I at an ambient temperature of 25C. Z T 7. Z is measured by dividing the AC voltage drop across the device by the AC current supplied. The specified limits are I = 0.1 I , ZT Z(AC) Z(DC) with AC frequency = 1 kHz. 8. Surge current waveform per Figure 5 and derate per Figure 4. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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