MMVL3401T1G ON Semiconductor

MMVL3401T1G Silicon Pin Diode This device is designed primarily for VHF band switching applications but is also suitable for use in generalpurpose switching circuits. Supplied in a Surface Mount package. Features MMVL3401T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V 35 Vdc (BR)R (I = 10 Adc) R Diode Capacitance C 1.0 pF T (V = 20 Vdc) R Series Resistance (Figure 5) R 0.7 S (I = 10 mAdc, f = 100 MHz) F Reverse Leakage Current I 0.1 Adc R (V = 25 Vdc) R TYPICAL CHARACTERISTICS 1.6 50 1.4 40 1.2 T = 25C A 1.0 30 0.8 T = 25C A 20 0.6 0.4 10 0.2 0 0 0.5 0.6 0.7 0.8 0.9 1.0 0 2.0 4.0 6.0 8.0 10 12 14 16 V , FORWARD VOLTAGE (VOLTS) I , FORWARD CURRENT (mA) F F Figure 1. Series Resistance Figure 2. Forward Voltage 20 100 40 10 10 7.0 4.0 5.0 V = 25 Vdc R T = 25C A 1.0 0.4 2.0 0.1 1.0 0.04 0.7 0.5 0.01 0.004 0.2 0.001 +3.0 0 3.0 6.0 9.0 12 15 18 21 24 27 60 20 0 +20 +60 +100 +140 V , REVERSE VOLTAGE (VOLTS) T , AMBIENT TEMPERATURE (C) R A Figure 3. Diode Capacitance Figure 4. Leakage Current