8-pin SOIC Single-Channel Phototransistor Output Optocoupler MOC205M, MOC206M, MOC207M, MOC211M, www.onsemi.com MOC212M, MOC213M, MOC216M, MOC217M Description These devices consist of a gallium arsenide infrared emitting diode SOIC8 optically coupled to a monolithic silicon phototransistor detector, in a CASE 751DZ surface mountable, small outline, plastic package. They are ideally suited for highdensity applications, and eliminate the need for MARKING DIAGRAM throughtheboard mounting. Features ON XXX VXYYS Closely Matched Current Transfer Ratios Minimum BV of 70 V CEO Guaranteed XXX = Specific Device Code MOC205M, MOC206M, MOC207M V = DIN EN/IEC6074755 Option (only Minimum BV of 30 V Guaranteed CEO appears on component ordered with this MOC211M, MOC212M, MOC213M, MOC216M, MOC217M option) X = Year Code Low LED Input Current Required for Easier Logic Interfacing YY = Work Week MOC216M, MOC217M S = Assembly Package Code Convenient Plastic SOIC8 Surface Mountable Package Style, with 0.050 Lead Spacing SCHEMATIC Safety and Regulatory Approvals: UL1577, 2,500 VAC for 1 Minute RMS DINEN/IEC6074755, 565 V Peak Working Insulation Voltage ANODE 1 8 N/C These are PbFree Devices Applications CATHODE 2 7 BASE Feedback Control Circuits Interfacing and Coupling Systems of Different Potentials and Impedances N/C 3 6 COLLECTOR General Purpose Switching Circuits Monitor and Detection Circuits N/C 4 5 EMITTER ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: January, 2021 Rev. 2 MOC217M/DMOC205M, MOC206M, MOC207M, MOC211M, MOC212M, MOC213M, MOC216M, MOC217M SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 6074755, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.) Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains <150 V IIV RMS Voltage <300 V IIII RMS Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit V InputtoOutput Test Voltage, Method A, V x 1.6 = V , Type and Sample Test 904 V PR IORM PR peak with t = 10 s, Partial Discharge < 5 pC m InputtoOutput Test Voltage, Method B, V x 1.875 = V , 100% Production Test 1060 V IORM PR peak with t = 1 s, Partial Discharge < 5 pC m V Maximum Working Insulation Voltage 565 V IORM peak V Highest Allowable OverVoltage 4000 V IOTM peak External Creepage 4 mm External Clearance 4 mm DTI Distance Through Insulation (Insulation Thickness) 0.4 mm T Case Temperature (Note 1) 150 C S I Input Current (Note 1) 200 mA S,INPUT P Output Power (Note 1) 300 mW S,OUTPUT 9 R Insulation Resistance at T , V = 500 V (Note 1) >10 IO S IO 1. Safety limit values maximum values allowed in the event of a failure. ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Rating Value Unit TOTAL DEVICE T Storage Temperature 40 to +125 C STG T Ambient Operating Temperature 40 to +100 C A T Junction Temperature 40 to +125 C J T Lead Solder Temperature 260 for 10 seconds C SOL P Total Device Power Dissipation T = 25C 240 mW D A Derate above 25C 2.94 mW/C EMITTER I Continuous Forward Current 60 mA F I (pk) Forward Current Peak (PW = 100 s, 120 pps) 1.0 A F V Reverse Voltage 6.0 V R P LED Power Dissipation T = 25C 90 mW D A Derate above 25C 0.8 mW/C DETECTOR I Continuous Collector Current 150 mA C V CollectorEmitter Voltage 30 V CEO V EmitterCollector Voltage 7 V ECO P Detector Power Dissipation T = 25C 150 mW D A Derate above 25C 1.76 mW/C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 2