TCDT1120, TCDT1120G Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES High common mode rejection NC C E 65 4 Four CTR groups available Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS 1 2 3 Switch-mode power supplies A( +) C () NC Line receiver 17201 6 V Computer peripheral interface DE Microprocessor system interface Reinforced isolation provides circuit protection against 17201 4 electrical shock (safety class II) Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): DESCRIPTION - for appl. class I - IV at mains voltage 300 V The TCDT1120(G) series consists of a phototransistor - for appl. class I - III at mains voltage 600 V optically coupled to a gallium arsenide infrared emitting according to DIN EN 60747-5-5 diode in a 6 lead plastic dual in line package. AGENCY APPROVALS UL1577, file no. E52744, double protection BSI IEC 60950 IEC 60065 DIN EN 60747-5-5 (VDE 0884) FIMKO cUL tested to CSA 22.2 bulletin 5A (1) ORDER INFORMATION PART REMARKS TCDT1120 CTR > 40 %, DIP-6 TCDT1122 CTR 63 % to 125 %, DIP-6 TCDT1123 CTR 100 % to 200 %, DIP-6 TCDT1124 CTR 160 % to 320 %, DIP-6 TCDT1120G CTR > 40 %, DIP-6 TCDT1122G CTR 63 % to 125 %, DIP-6 TCDT1123G CTR 100 % to 200 %, DIP-6 TCDT1124G CTR 160 % to 320 %, DIP-6 Note (1) G = leadform 10.16 mm G is not marked on the body. Document Number: 83532 For technical questions, contact: optocoupleranswers vishay.com www.vishay.com Rev. 1.7, 28-Oct-09 789 TCDT1120, TCDT1120G Optocoupler, Phototransistor Output Vishay Semiconductors (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 5V R Forward current I 60 mA F Forward surge current t 10 s I 3A p FSM Power dissipation P 100 mW diss Junction temperature T 125 C j OUTPUT Collector emitter voltage V 70 V CEO Emitter collector voltage V 7V ECO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM Power dissipation P 150 mW diss Junction temperature T 125 C j COUPLER Isolation test voltage (RMS) t = 1 s V 5000 V ISO RMS Total power dissipation P 250 mW tot Ambient temperature range T - 55 to + 100 C amb Storage temperature range T - 55 to + 125 C stg (2) Soldering temperature 2 mm from case, t 10 s T 260 C sld Notes (1) T = 25 C, unless otherwise specified. amb Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices (DIP). (1) ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 50 mA V 1.25 1.6 V F F Junction capacitance V = 0 V, f = 1 MHz C 50 pF R j OUTPUT Collector base voltage I = 100 AV 90 V C CBO Collector emitter voltage I = 1 mA V 90 V C CEO Emitter collector voltage I = 100 A V7V E ECO Collector ermitter cut-off current V = 20 V, I = 0 A I 150 nA CE F CEO COUPLER Collector emitter saturation voltage I = 10 mA, I = 1 mA V 0.3 V F C CEsat Cut-off frequency V = 5 V, I = 10 mA, R = 100 f 110 kHz CE F L c Coupling capacitance f = 1 MHz C 0.3 pF k Note (1) T = 25 C, unless otherwise specified. amb Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. www.vishay.com For technical questions, contact: optocoupleranswers vishay.com Document Number: 83532 790 Rev. 1.7, 28-Oct-09