MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M 8-pin SOIC Dual-Channel Phototransistor Output www.onsemi.com Optocoupler These devices consist of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. They are ideally suited for highdensity applications, and eliminate the need for throughtheboard mounting. Features Closely Matched Current Transfer Ratios Minimum BV of 70 V Guaranteed SOIC8 CEO M SUFFIX MOCD207M, MOCD208M, MOCD213M CASE 751DZ Minimum BV of 30 V Guaranteed CEO MOCD211M, MOCD217M Low LED Input Current Required for Easier Logic Interfacing MARKING DIAGRAM MOCD217M 1 Convenient Plastic SOIC8 Surface Mountable Package Style, with 0.050 Lead Spacing Safety and Regulatory Approvals: 2 D207 UL1577, 2,500 VAC for 1 Minute RMS DINEN/IEC6074755, 565 V Peak Working Insulation Voltage These are PbFree Devices 6 V X YY S Applications Feedback Control Circuits Interfacing and Coupling Systems of Different Potentials and Impedances 3 4 5 General Purpose Switching Circuits 1 Logo Monitor and Detection Circuits 2 Device Number 3 DIN EN/IEC6074755 Option (only appears on component ordered with this option) 4 OneDigit Year Code, e.g., 4 ANODE 1 1 8 COLLECTOR 1 5 Digit Work Week, Ranging from 01 to 53 6 Assembly Package Code CATHODE 1 2 7 EMITTER 1 ORDERING INFORMATION ANODE 2 3 6 COLLECTOR 2 See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. CATHODE 2 4 5 EMITTER 2 Figure 1. Schematic Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: October, 2018 Rev. 6 MOCD217M/DMOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M Safety and Insulation Ratings As per DIN EN/IEC 6074755, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated < 150 V IIV RMS Mains Voltage < 300 V IIII RMS Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit V InputtoOutput Test Voltage, Method A, V x 1.6 = V , 904 V PR IORM PR peak Type and Sample Test with t = 10 s, Partial Discharge < 5 pC m InputtoOutput Test Voltage, Method B, V x 1.875 = V , 1060 V IORM PR peak 100% Production Test with t = 1 s, Partial Discharge < 5 pC m V Maximum Working Insulation Voltage 565 V IORM peak V Highest Allowable OverVoltage 4000 V IOTM peak External Creepage 4 mm External Clearance 4 mm DTI Distance Through Insulation (Insulation Thickness) 0.4 mm T Case Temperature (Note 1) 150 C S I Input Current (Note 1) 200 mA S,INPUT P Output Current (Note 1) 300 mW S,OUTPUT 9 R Insulation Resistance at T , V = 500 V (Note 1) >10 IO S IO 1. Safety limit values maximum values allowed in the event of a failure. www.onsemi.com 2