X-On Electronics has gained recognition as a prominent supplier of MUN5216T1G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. MUN5216T1G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

MUN5216T1G ON Semiconductor

MUN5216T1G electronic component of ON Semiconductor
MUN5216T1G ON Semiconductor
MUN5216T1G Bipolar Transistors - Pre-Biased
MUN5216T1G  Semiconductors

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See Product Specifications
Part No. MUN5216T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Trans Digital BJT NPN 50V 100mA 3-Pin SC-70 T/R
Datasheet: MUN5216T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
13275: USD 0.0354 ea
Line Total: USD 469.94 
Availability - 29100
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ: 13275  Multiples: 1
Pack Size: 1
Availability Price Quantity
57230
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 13275
Multiples : 1
13275 : USD 0.0354
100000 : USD 0.0295

29100
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 13275
Multiples : 1
13275 : USD 0.0354
100000 : USD 0.0295

66930
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 13275
Multiples : 1
13275 : USD 0.0354
100000 : USD 0.0295

29100
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 13275
Multiples : 1
13275 : USD 0.0354
100000 : USD 0.0295

12920
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 13275
Multiples : 1
13275 : USD 0.0354
100000 : USD 0.0295

119310
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 13275
Multiples : 1
13275 : USD 0.0354
100000 : USD 0.0295

   
Manufacturer
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Transistor Polarity
Typical Input Resistor
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DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
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Maximum Operating Temperature
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Qualification
Collector-Emitter Voltage
Mounting
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Dc Current Gain
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Rad Hardened
Dc Current Gain Hfe Max
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Cnhts
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Mxhts
Pd - Power Dissipation
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We are delighted to provide the MUN5216T1G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MUN5216T1G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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MUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3, NSBC143TF3 Digital Transistors (BRT) R1 = 4.7 k , R2 = k www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT) contains a single transistor with a monolithic bias (INPUT) R2 network consisting of two resistors a series base resistor and a base emitter resistor. The BRT eliminates these individual components by PIN 2 integrating them into a single device. The use of a BRT can reduce EMITTER (GROUND) both system cost and board space. Features MARKING DIAGRAMS Simplifies Circuit Design Reduces Board Space SC59 XX M CASE 318D Reduces Component Count STYLE 1 S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable SOT23 These Devices are PbFree, Halogen Free/BFR Free and are RoHS XXX M CASE 318 Compliant STYLE 6 1 MAXIMUM RATINGS (T = 25C) A Rating Symbol Max Unit SC70/SOT323 XX M CASE 419 CollectorBase Voltage V 50 Vdc CBO STYLE 3 1 CollectorEmitter Voltage V 50 Vdc CEO SC75 Collector Current Continuous I 100 mAdc C CASE 463 XX M Input Forward Voltage V 30 Vdc IN(fwd) STYLE 1 1 Input Reverse Voltage V 6 Vdc IN(rev) SOT723 Stresses exceeding those listed in the Maximum Ratings table may damage the XX M CASE 631AA device. If any of these limits are exceeded, device functionality should not be STYLE 1 assumed, damage may occur and reliability may be affected. 1 SOT1123 X M CASE 524AA 1 STYLE 1 XXX = Specific Device Code M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation may vary depending up- on manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: October, 2016 Rev. 3 DTC143T/DMUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3, NSBC143TF3 Table 1. ORDERING INFORMATION Device Part Marking Package Shipping MUN2216T1G, SMUN2216T1G 8F SC59 3000 / Tape & Reel (PbFree) MMUN2216LT1G, SMMUN2216LT1G A8F SOT23 3000 / Tape & Reel (PbFree) SMMUN2216LT3G A8F SOT23 10000 / Tape & Reel (PbFree) MUN5216T1G, NSVMUN5216T1G 8F SC70/SOT323 3000 / Tape & Reel (PbFree) DTC143TET1G 8F SC75 3000 / Tape & Reel (PbFree) DTC143TM3T5G 8F SOT723 8000 / Tape & Reel (PbFree) NSBC143TF3T5G F (180) SOT1123 8000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. * (xx) = Degree rotation in the clockwise direction. 300 250 (1) SC75 and SC70/SOT323 Minimum Pad 200 (2) SC59 Minimum Pad (1) (2) (3) (4) (5) (3) SOT23 Minimum Pad 2 150 (4) SOT1123 100 mm , 1 oz. copper trace (5) SOT723 Minimum Pad 100 50 0 50 25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Figure 1. Derating Curve www.onsemi.com 2 P , POWER DISSIPATION (mW) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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