X-On Electronics has gained recognition as a prominent supplier of MUN5236T1G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. MUN5236T1G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

MUN5236T1G ON Semiconductor

MUN5236T1G electronic component of ON Semiconductor
MUN5236T1G ON Semiconductor
MUN5236T1G Bipolar Transistors - Pre-Biased
MUN5236T1G  Semiconductors

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See Product Specifications
Part No. MUN5236T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Trans Digital BJT NPN 50V 100mA 3-Pin SC-70 T/R
Datasheet: MUN5236T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2195 ea
Line Total: USD 0.22 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 07 Jul to Fri. 11 Jul
MOQ : 9000
Multiples : 3000
9000 : USD 0.0299
9000 : USD 0.0296
9000 : USD 0.0292
12000 : USD 0.029
15000 : USD 0.0276
21000 : USD 0.0274
24000 : USD 0.027
30000 : USD 0.0268
75000 : USD 0.0265

0
Ship by Mon. 07 Jul to Fri. 11 Jul
MOQ : 27000
Multiples : 27000
27000 : USD 0.0343

0
Ship by Mon. 07 Jul to Fri. 11 Jul
MOQ : 11905
Multiples : 11905
11905 : USD 0.0353

0
Ship by Thu. 03 Jul to Mon. 07 Jul
MOQ : 1
Multiples : 1
1 : USD 0.2195
10 : USD 0.2117
1000 : USD 0.0602
3000 : USD 0.0375
6000 : USD 0.0341
9000 : USD 0.0284
24000 : USD 0.0227

0
Ship by Mon. 07 Jul to Fri. 11 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.0314

   
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DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
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We are delighted to provide the MUN5236T1G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MUN5236T1G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3 Digital Transistors (BRT) R1 = 100 k , R2 = 100 k www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 BASE Transistor (BRT) contains a single transistor with a monolithic bias (INPUT) R2 network consisting of two resistors a series base resistor and a base emitter resistor. The BRT eliminates these individual components by PIN 2 integrating them into a single device. The use of a BRT can reduce EMITTER both system cost and board space. (GROUND) Features MARKING DIAGRAMS Simplifies Circuit Design Reduces Board Space SC59 Reduces Component Count XX M CASE 318D STYLE 1 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AEC-Q101 Qualified 1 and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS SOT23 XXX M CASE 318 Compliant STYLE 6 MAXIMUM RATINGS (T = 25C) 1 A Rating Symbol Max Unit SC70/SOT323 XX M CollectorBase Voltage V 50 Vdc CASE 419 CBO STYLE 3 CollectorEmitter Voltage V 50 Vdc CEO 1 Collector Current Continuous I 100 mAdc C SC75 CASE 463 XX M Input Forward Voltage V 40 Vdc IN(fwd) STYLE 1 1 Input Reverse Voltage V 10 Vdc IN(rev) Stresses exceeding those listed in the Maximum Ratings table may damage the SOT723 device. If any of these limits are exceeded, device functionality should not be XX M CASE 631AA assumed, damage may occur and reliability may be affected. STYLE 1 1 XXX = Specific Device Code M = Date Code* =PbFree Package (Note: Microdot may be in either location) *Date Code orientation may vary depending up- on manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: January, 2019 Rev. 5 DTC115E/DMUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3 Table 1. ORDERING INFORMATION Device Part Marking Package Shipping MUN2236T1G, NSVMUN2236T1G* 8N SC59 3000 / Tape & Reel (PbFree) MMUN2236LT1G, NSVMMUN2236LT1G* AA5 SOT23 3000 / Tape & Reel (PbFree) MUN5236T1G, NSVMUN5236T1G* 8N SC70/SOT323 3000 / Tape & Reel (PbFree) DTC115EET1G 8N SC75 3000 / Tape & Reel (PbFree) DTC115EM3T5G 8N SOT723 8000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AEC-Q101 Qualified and PPAP Capable. 300 250 (1) SC75 and SC70/SOT323 Minimum Pad 200 (2) SC59 Minimum Pad (1) (2) (3) (4) (3) SOT23 Minimum Pad 150 (4) SOT723 Minimum Pad 100 50 0 50 25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Figure 1. Derating Curve www.onsemi.com 2 P , POWER DISSIPATION (mW) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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