ecoSWITCH Advanced Load Management Controlled Load Switch with Low R ON NCP45540 The NCP45540 load switch provides a component and area-reducing solution for efficient power domain switching with www.onsemi.com inrush current limit via softstart. In addition to integrated control functionality with ultra low onresistance, this device offers system R TYP V V I * safeguards and monitoring via fault protection and power good ON CC IN MAX DC signaling. This cost effective solution is ideal for power management 7.7 m 3.3 V 1.8 V and hot-swap applications requiring low power consumption in a 14 A 8.0 m 3.3 V 5.0 V small footprint. 9.2 m 3.3 V 12 V Features *I is defined as the maximum steady state MAX DC Advanced Controller with Charge Pump current the load switch can pass at room ambient Integrated N-Channel MOSFET with Low R temperature without entering thermal lockout. ON Input Voltage Range 0.5 V to 13.5 V Soft-Start via Controlled Slew Rate Adjustable Slew Rate Control Power Good Signal 1 DFN12, 3x3 Thermal Shutdown CASE 506CD Undervoltage Lockout Short-Circuit Protection MARKING DIAGRAM Extremely Low Standby Current NCP45 Load Bleed (Quick Discharge) 540x This is a PbFree Device ALYW Typical Applications Portable Electronics and Systems x = H for NCP45540H = L for NCP45540L Notebook and Tablet Computers A = Assembly Location Telecom, Networking, Medical, and Industrial Equipment L = Wafer Lot SetTop Boxes, Servers, and Gateways Y = Year W = Work Week HotSwap Devices and Peripheral Ports = PbFree Package (Note: Microdot may be in either location) V V CC EN PG IN PIN CONFIGURATION Thermal, V 1 12 V IN OUT Bandgap Undervoltage Control & & 2 V Logic EN 11 OUT Biases ShortCircuit Protection V V 3 10 OUT CC 13: V IN V GND 4 9 OUT Delay and SR 5 8 NC Charge Slew Rate Pump Control PG 6 7 BLEED (Top View) SR GND BLEED ORDERING INFORMATION V OUT See detailed ordering and shipping information on page 13 of Figure 1. Block Diagram this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: March, 2020 Rev. 6 NCP45540/DNCP45540 Table 1. PIN DESCRIPTION Pin Name Function 1, 13 V Drain of MOSFET (0.5 V 13.5 V), Pin 1 must be connected to Pin 13 IN 2 EN NCP45540H Activehigh digital input used to turn on the MOSFET, pin has an internal pull down resistor to GND NCP45540L Activelow digital input used to turn on the MOSFET, pin has an internal pull up resistor to V CC 3 V Supply voltage to controller (3.0 V 5.5 V) CC 4 GND Controller ground 5 SR Slew rate adjustment float if not used 6 PG Activehigh, opendrain output that indicates when the gate of the MOSFET is fully driven, external pull up resistor 1 k to an external voltage source required tie to GND if not used. 7 BLEED Load bleed connection, must be tied to V either directly or through a resistor OUT 1 k 8 NC No connect, internally floating but pin may be tied to V OUT 912 V Source of MOSFET connected to load OUT Table 2. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Supply Voltage Range V 0.3 to 6 V CC Input Voltage Range V 0.3 to 18 V IN Output Voltage Range V 0.3 to 18 V OUT EN Digital Input Range V 0.3 to (V + 0.3) V EN CC PG Output Voltage Range (Note 1) V 0.3 to 6 V PG Thermal Resistance, JunctiontoAmbient, Steady State (Note 2) R 30.9 C/W JA Thermal Resistance, JunctiontoAmbient, Steady State (Note 3) 51.3 C/W R JA Thermal Resistance, JunctiontoCase (V Paddle) R 3.5 C/W IN JC Continuous MOSFET Current T = 25C (Notes 2 and 4) I 14 A A MAX Continuous MOSFET Current T = 25C (Notes 3 and 4) I 15.5 A A MAX Transient MOSFET Current (for up to 500 s) I 24 A MAX TRANS Total Power Dissipation T = 25C (Note 2) P 3.24 W A D Derate above T = 25C 32.4 mW/C A Total Power Dissipation T = 25C (Note 3) P 1.95 W A D Derate above T = 25C 19.5 mW/C A Storage Temperature Range T 40 to 150 C STG Lead Temperature, Soldering (10 sec.) T 260 C SLD ESD Capability, Human Body Model (Notes 5 and 6) ESD 3.0 kV HBM ESD Capability, Charged Device Model (Note 5) ESD 1.0 kV CDM Latchup Current Immunity (Notes 5 and 6) LU 100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. PG is an opendrain output that requires an external pull up resistor 1 k to an external voltage source. 2. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 3. Surfacemounted on FR4 board using the minimum recommended pad size, 1 oz Cu. 4. Ensure that the expected operating MOSFET current will not cause the ShortCircuit Protection to turn the MOSFET off undesirably. 5. Tested by the following methods T = 25C: A ESD Human Body Model tested per JESD22A114 ESD Charged Device Model per ESD STM5.3.1 Latchup Current tested per JESD78 6. Rating is for all pins except for V and V which are tied to the internal MOSFETs Drain and Source. Typical MOSFET ESD performance IN OUT for V and V should be expected and these devices should be treated as ESD sensitive. IN OUT www.onsemi.com 2