NDT451AN ON Semiconductor

NDT451AN electronic component of ON Semiconductor
NDT451AN ON Semiconductor
NDT451AN MOSFETs
NDT451AN  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NDT451AN MOSFETs across the USA, India, Europe, Australia, and various other global locations. NDT451AN MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. NDT451AN
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 30V; 7.2A; 3W; SOT223
Datasheet: NDT451AN Datasheet (PDF)
Price (USD)
1: USD 1.5125 ea
Line Total: USD 1.51 
Availability : 1939
  
Ship by Wed. 12 Nov to Fri. 14 Nov
QtyUnit Price
1$ 1.5125
10$ 0.9864
100$ 0.6908
500$ 0.5071
1000$ 0.4917
2000$ 0.4895
4000$ 0.4851
8000$ 0.4664

Availability 2425
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 500
Multiples : 500
QtyUnit Price
500$ 0.6145
1000$ 0.5931
4000$ 0.5378
8000$ 0.5171
12000$ 0.5145
16000$ 0.512


Availability 717
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 146
Multiples : 1
QtyUnit Price
146$ 1.7859
211$ 1.2342
213$ 1.2219
288$ 0.903
292$ 0.8914
500$ 0.5928


Availability 1939
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.5125
10$ 0.9864
100$ 0.6908
500$ 0.5071
1000$ 0.4917
2000$ 0.4895
4000$ 0.4851
8000$ 0.4664


Availability 3047
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.966
10$ 0.9072
22$ 0.882
60$ 0.833
100$ 0.8162


Availability 57
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.2962
10$ 1.9066
30$ 1.1441
100$ 0.9807
500$ 0.9093
1000$ 0.8756

   
Manufacturer
Product Category
Polarisation
Kind Of Package
Case
Mounting
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Gate Charge
Power Dissipation
Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NDT451AN from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NDT451AN and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field 7.2A, 30V. R = 0.035 V = 10V DS(ON) GS effect transistors are produced using ON R = 0.05 V = 4.5V. DS(ON) GS Semiconductor s proprietary, high cell density, DMOS technology. This very high density process is especially High density cell design for extremely low R . DS(ON) tailored to minimize on-state resistance and provide High power and current handling capability in a widely used superior switching performance. These devices are surface mount package. particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. D G D S Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter NDT451AN Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage 20 V GSS I Drain Current - Continuous (Note 1a) 7.2 A D - Pulsed 25 P Maximum Power Dissipation (Note 1a) 3 W D (Note 1b) 1.3 (Note 1c) 1.1 T ,T Operating and Storage Temperature Range -65 to 150 C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 42 C/W R JA Thermal Resistance, Junction-to-Case (Note 1) 12 C/W R JC 2009 Semiconductor Components Industries, LLC. Publication Order Number: NDT451AN/D September-2017, Rev. 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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