X-On Electronics has gained recognition as a prominent supplier of NDT451AN MOSFETs across the USA, India, Europe, Australia, and various other global locations. NDT451AN MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NDT451AN ON Semiconductor

NDT451AN electronic component of ON Semiconductor
NDT451AN ON Semiconductor
NDT451AN MOSFETs
NDT451AN  Semiconductors

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See Product Specifications
Part No. NDT451AN
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 30V; 7.2A; 3W; SOT223
Datasheet: NDT451AN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.475 ea
Line Total: USD 1.48 
Availability - 4753
Ship by Tue. 24 Jun to Thu. 26 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Thu. 26 Jun to Wed. 02 Jul
MOQ : 500
Multiples : 1
500 : USD 0.6191
1000 : USD 0.5974
4000 : USD 0.5305
8000 : USD 0.5279
12000 : USD 0.5252
16000 : USD 0.5226

717
Ship by Thu. 26 Jun to Wed. 02 Jul
MOQ : 202
Multiples : 1
202 : USD 1.2922
267 : USD 0.9763
269 : USD 0.9685
318 : USD 0.819
323 : USD 0.806
500 : USD 0.5928

3880
Ship by Thu. 26 Jun to Wed. 02 Jul
MOQ : 4000
Multiples : 4000
4000 : USD 0.6125

31
Ship by Thu. 03 Jul to Tue. 08 Jul
MOQ : 1
Multiples : 1
1 : USD 1.3912
10 : USD 1.361
30 : USD 0.9057
100 : USD 0.8929

4753
Ship by Tue. 24 Jun to Thu. 26 Jun
MOQ : 1
Multiples : 1
1 : USD 1.475
10 : USD 0.9852
25 : USD 0.9442
100 : USD 0.6798
250 : USD 0.6787
500 : USD 0.5335
1000 : USD 0.5038
4000 : USD 0.4851

3048
Ship by Tue. 24 Jun to Thu. 26 Jun
MOQ : 1
Multiples : 1
1 : USD 0.952
10 : USD 0.9044
22 : USD 0.8736
60 : USD 0.826
100 : USD 0.8134

   
Manufacturer
Product Category
Polarisation
Kind Of Package
Case
Mounting
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Gate Charge
Power Dissipation
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We are delighted to provide the NDT451AN from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NDT451AN and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field 7.2A, 30V. R = 0.035 V = 10V DS(ON) GS effect transistors are produced using ON R = 0.05 V = 4.5V. DS(ON) GS Semiconductor s proprietary, high cell density, DMOS technology. This very high density process is especially High density cell design for extremely low R . DS(ON) tailored to minimize on-state resistance and provide High power and current handling capability in a widely used superior switching performance. These devices are surface mount package. particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. D G D S Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter NDT451AN Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage 20 V GSS I Drain Current - Continuous (Note 1a) 7.2 A D - Pulsed 25 P Maximum Power Dissipation (Note 1a) 3 W D (Note 1b) 1.3 (Note 1c) 1.1 T ,T Operating and Storage Temperature Range -65 to 150 C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 42 C/W R JA Thermal Resistance, Junction-to-Case (Note 1) 12 C/W R JC 2009 Semiconductor Components Industries, LLC. Publication Order Number: NDT451AN/D September-2017, Rev. 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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