NLAS4501 Single SPST Analog Switch The NLAS4501 is an analog switch manufactured in sub-micron silicon-gate CMOS technology. It achieves very low R while ON maintaining extremely low power dissipation. The device is a bilateral switch suitable for switching either analog or digital signals, which may vary from zero to full supply voltage. NLAS4501 MAXIMUM RATINGS Symbol Parameter Value Unit V Positive DC Supply Voltage 0.5 to 7.0 V CC V Digital Input Voltage (Enable) 0.5 to 7.0 V IN V Analog Output Voltage (V or V ) 0.5 to V 0.5 V IS NO COM CC I DC Current, Into or Out of Any Pin 20 mA IK T Storage Temperature Range 65 to 150 C STG T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L T Junction Temperature under Bias 150 C J Thermal Resistance SC70-5/SC-88A (Note 1) 350 C/W JA TSOP-5 230 P Power Dissipation in Still Air at 85C SC70-5/SC-88A 150 mW D TSOP-5 200 MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 30% - 35% UL-94-VO (0.125 in) R V ESD Withstand Voltage Human Body Model (Note 2) > 2000 V ESD Machine Model (Note 3) > 100 Charged Device Model (Note 4) N/A I Latch-Up Performance Above V and Below GND at 85C (Note 5) 300 mA Latch-Up CC Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm-by-1 inch, 2-ounce copper trace with no air flow. 2. Tested to EIA/JESD22-A114-A. 3. Tested to EIA/JESD22-A115-A. 4. Tested to JESD22-C101-A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit V Positive DC Supply Voltage 2.0 5.5 V CC V Digital Input Voltage (Enable) GND 5.5 V IN V Static or Dynamic Voltage Across an Off Switch GND V V IO CC V Analog Input Voltage (NO, COM) GND V V IS CC T Operating Temperature Range, All Package Types -55 +125 C A t , t Input Rise or Fall Time, V = 3.3 V + 0.3 V 0 100 ns/V r f cc (Enable Input) V = 5.0 V + 0.5 V 0 20 cc DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR Junction Temperature C Time, Hours Time, Years 80 1,032,200 117.8 90 419,300 47.9 100 178,700 20.4 1 110 79,600 9.4 1 10 100 1000 120 37,000 4.2 TIME, YEARS 130 17,800 2.0 Figure 2. Failure Rate vs. Time Junction Temperature 140 8,900 1.0