Automotive Single D Flip Flop NLV18SZ74 The NLV18SZ74 is an automotivegrade high performance, full function Edge triggered D Flip Flop. Features www.onsemi.com Designed for 1.65 V to 5.5 V V Operation CC MARKING 2.7 ns t at V = 5 V (typ) PD CC DIAGRAMS Inputs/Outputs Overvoltage Tolerant up to 5.5 V I Supports Partial Power Down Protection OFF Source/Sink 24 mA at 3.0 V XX US8 Available in US8 Package ALYW US SUFFIX CASE 493 Chip Complexity < 100 FETs NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ100 XX = Specific Device Code A = Assembly Location Qualified and PPAP Capable L = Wafer Lot These Devices are PbFree, Halogen Free/BFR Free and are RoHS Y = Year Compliant W = Work Week PR ORDERING INFORMATION 7 See detailed ordering, marking and shipping information on page 6 of this data sheet. D 2 Q 5 Q 3 CP 1 6 V = 8, GND = 4 CC CLR Figure 1. Logic Symbol PIN ASSIGNMENT Pin US8 1 CP 2 D 3 Q 4 GND 5 Q 6 CLR 7 PR 8 V CC Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: May, 2020 Rev. 1 NLV18SZ74/DNLV18SZ74 MAXIMUM RATINGS Symbol Characteristics Value Unit V DC Supply Voltage 0.5 to +6.5 V CC V DC Input Voltage 0.5 to +6.5 V IN V DC Output Voltage ActiveMode (High or Low State) 0.5 to V + 0.5 V OUT CC TriState Mode (Note 1) 0.5 to +6.5 PowerDown Mode (V = 0 V) 0.5 to +6.5 CC I DC Input Diode Current V < GND 50 mA IK IN I DC Output Diode Current V < GND 50 mA OK OUT I DC Output Source/Sink Current 50 mA OUT I or I DC Supply Current per Supply Pin or Ground Pin 100 mA CC GND T Storage Temperature Range 65 to +150 C STG T Lead Temperature, 1 mm from Case for 10 secs 260 C L T Junction Temperature Under Bias +150 C J Thermal Resistance (Note 2) 250 C/W JA P Power Dissipation in Still Air 250 mW D MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 0.125 in R V ESD Withstand Voltage (Note 3) Human Body Model 2000 V ESD Charged Device Model 1000 I Latchup Performance (Note 4) 100 mA Latchup Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Applicable to devices with outputs that may be tristated. 2. Measured with minimum pad spacing on an FR4 board, using 10mmby1inch, 2 ounce copper trace no air flow. 3. HBM tested to ANSI/ESDA/JEDEC JS001 2017. CDM tested to EIA/JESD22 C101 F. JEDEC recommends that ESD qualification to EIA/JESD22A115A (Machine Model) be discontinued per JEDEC/JEP172A. 4. Tested to EIA/JESD78 Class II. RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit V Positive DC Supply Voltage 1.65 5.5 V CC V DC Input Voltage 0 5.5 V IN V DC Output Voltage ActiveMode (High or Low State) 0 V OUT CC TriState Mode (Note 1) 0 5.5 PowerDown Mode (V = 0 V) 0 5.5 CC T Operating Temperature Range 55 +125 C A t , t Input Rise and Fall Time V = 1.65 V to 1.95 V 0 20 ns/V R F CC V = 2.3 V to 2.7 V 0 20 CC V = 3.0 V to 3.6 V 0 10 CC V = 4.5 V to 5.5 V 0 5 CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. DC ELECTRICAL CHARACTERISTICS T = 25 C 55 C T 125 C A A V CC (V) Min Typ Max Min Max Symbol Parameter Condition Units V HighLevel Input 1.65 to 1.95 0.65 V 0.65 V V IH CC CC Voltage 2.3 to 5.5 0.70 V 0.70 V CC CC V LowLevel Input 1.65 to 1.95 0.35 V 0.35 V V IL CC CC Voltage 2.3 to 5.5 0.30 V 0.30 V CC CC www.onsemi.com 2