MBR130LSFT1G Schottky Power Rectifier, Surface Mount 1.0 A, 30 V, SOD-123 Package This device uses the Schottky Barrier principle with a large area MBR130LSFT1G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 30 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current (At Rated V , T = 117C) I 1.0 A R L O Peak Repetitive Forward Current I 2.0 A FRM (At Rated V , Square Wave, 100 kHz, T = 110C) R L NonRepetitive Peak Surge Current I 40 A FSM (NonRepetitive peak surge current, halfwave, single phase, 60 Hz) Storage Temperature T 55 to 150 C stg Operating Junction Temperature T 55 to 125 C J Voltage Rate of Change (Rated V , T = 25C) dv/dt 10,000 V/ s R J THERMAL CHARACTERISTICS Thermal Resistance, JunctiontoLead (Note 1) R 26 C/W tjl Thermal Resistance, JunctiontoLead (Note 2) R 21 tjl Thermal Resistance, JunctiontoAmbient (Note 1) R 325 tja Thermal Resistance, JunctiontoAmbient (Note 2) R 82 tja Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Mounted with minimum recommended pad size, PC Board FR4. 2 2. Mounted with 1 in. copper pad (Cu area 700 mm ). ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 3) V T = 25C T = 100C V F J J (I = 0.1 A) 0.29 0.18 F (I = 0.7 A) 0.36 0.27 F (I = 1.0 A) 0.38 0.30 F I mA Maximum Instantaneous Reverse Current (Note 3) T = 25C T = 100C R J J (V = 30 V) 1.0 25 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 250 s, Duty Cycle 2%.