Product Information

NRVB440MFSWFT1G

NRVB440MFSWFT1G electronic component of ON Semiconductor

Datasheet
ON Semiconductor Schottky Diodes & Rectifiers Schottky Pwr Rectifr Switchmode

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5543 ea
Line Total: USD 0.55

1597 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1583 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

NRVB440MFSWFT1G
ON Semiconductor

1 : USD 0.5543
10 : USD 0.4796
100 : USD 0.3404
500 : USD 0.2933
1000 : USD 0.2887
1500 : USD 0.2507
3000 : USD 0.2254
9000 : USD 0.2173
24000 : USD 0.2162

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Brand
Packagingoptionsscrubbed
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
LoadingGif

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MBR440MFS, NRVB440MFS SWITCHMODE Power Rectifiers These stateoftheart devices have the following features: Features MBR440MFS, NRVB440MFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 40 R Average Rectified Forward Current I 4.0 A F(AV) (Rated V , T = 165C) R C Peak Repetitive Forward Current, I 8.0 A FRM (Rated V , Square Wave, 20 kHz, T = 165C) R C NonRepetitive Peak Surge Current I 40 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature T 55 to +175 C J Unclamped Inductive Switching Energy (10 mH Inductor, Non repetitive) E 10 mJ AS ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, JunctiontoCase, Steady State R 2.4 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) v V F (i = 4 Amps, T = 125C) 0.58 0.63 F J (i = 4 Amps, T = 25C) 0.59 0.65 F J Instantaneous Reverse Current (Note 1) i mA R (Rated dc Voltage, T = 125C) 10 15 J (Rated dc Voltage, T = 25C) 0.070 0.8 J 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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