Switch-mode Power Rectifiers DPAK3 Surface Mount Package MBRD620CT, NRVBD620VCT, SBRV620CT www.onsemi.com Series These stateoftheart devices are designed for use in switching SCHOTTKY BARRIER power supplies, inverters and as free wheeling diodes. RECTIFIERS Features 6.0 AMPERES, 20 60 VOLTS Extremely Fast Switching Extremely Low Forward Drop Platinum Barrier with Avalanche Guardrings NRVBD and SBRV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements DPAK CASE 369C AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant 1 Mechanical Characteristics: 4 3 Case: Epoxy, Molded Weight: 0.4 Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal MARKING DIAGRAM Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: AYWW 260C Max. for 10 Seconds B ESD Ratings: 6x0TG Machine Model = C Human Body Model = 3B A = Assembly Location* Y = Year WW = Work Week B6x0T = Device Code x = 2, 3, 4, 5, or 6 G = PbFree Package * The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2020 Rev. 15 MBRD620CT/DMBRD620CT, NRVBD620VCT, SBRV620CT Series MAXIMUM RATINGS MBRD/NRVBD/SBRV 620CT 630CT 640CT 650CT 660CT Rating Symbol Unit Peak Repetitive Reverse Voltage V 20 30 40 50 60 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) T = 130C C Per Diode 3 Per Device 6 Peak Repetitive Forward Current, I A FRM T = 130C (Square Wave, Duty = 0.5) C Per Diode 6 Nonrepetitive Peak Surge Current (Surge applied at rated load I 75 A FSM conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2 s, 1 kHz) I 1 A RRM Operating Junction Temperature (Note 1) T 65 to +175 C J Storage Temperature T 65 to +175 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS PER DIODE Characteristic Symbol Value Unit Maximum Thermal Resistance, JunctiontoCase R 6 C/W JC Maximum Thermal Resistance, JunctiontoAmbient (Note 2) R 80 C/W JA 2. Rating applies when surface mounted on the minimum pad size recommended. ELECTRICAL CHARACTERISTICS PER DIODE Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) V V F i = 3 Amps, T = 25C 0.7 F C i = 3 Amps, T = 125C 0.65 F C i = 6 Amps, T = 25C 0.9 F C i = 6 Amps, T = 125C 0.85 F C Maximum Instantaneous Reverse Current (Note 3) i mA R (Rated dc Voltage, T = 25C) 0.1 C (Rated dc Voltage, T = 125C) 15 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2