MBRS540T3G, NRVBS540T3G Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry www.onsemi.com features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency SCHOTTKY BARRIER rectification, or as free wheeling and polarity protection diodes in RECTIFIER surface mount applications where compact size and weight are critical 5.0 AMPERES, 40 VOLTS to the system. Features Small Compact Surface Mountable Package with JBend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction SMC 2LEAD Excellent Ability to Withstand Reverse Avalanche Energy Transients CASE 403AC GuardRing for Stress Protection NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 MARKING DIAGRAM Qualified and PPAP Capable* These Devices are PbFree, Halogen Free/BFR Free and are RoHS AYWW Compliant B540 Mechanical Characteristics Case: Epoxy, Molded, Epoxy Meets UL 94 V0 0.125 in Weight: 217 mg (Approximately) B540 = Specific Device Code A = Assembly Location** Finish: All External Surfaces Corrosion Resistant and Terminal Y = Year Leads are Readily Solderable WW = Work Week Lead and Mounting Surface Temperature for Soldering Purposes: = PbFree Package 260C Max. for 10 Seconds (Note: Microdot may be in either location) Polarity: Polarity Band on Plastic Body Indicates Cathode Lead **The Assembly Location code (A) is front side option- ESD Rating: al. In cases where the Assembly Location is stamped Machine Model, C (> 400 V) in the package, the front side assembly code may be Human Body Model, 3B (> 8000 V) blank. Device Meets MSL 1 Requirements ORDERING INFORMATION Device Package Shipping MBRS540T3G SMC 2,500 / (PbFree) Tape & Reel NRVBS540T3G* SMC 2,500 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: June, 2017 Rev. 10 MBRS540T3/DNRVBS540T3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 40 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 5 A F(AV) (At Rated V , T = 105C) R C Peak Repetitive Forward Current I 10 A FRM (At Rated V , Square Wave, 20 KHz, T = 80C) R C NonRepetitive Peak Surge Current I 190 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature (Note 1) T 65 to +150 C J Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, C/W JunctiontoLead (Note 2) R 12 JL Thermal Resistance, JunctiontoAmbient (Note 2) R 111 JA 2. Rating applies when surface mounted on the minimum pad size recommended. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) V V F (i = 5.0 A, T = 25C) 0.50 F C Maximum Instantaneous Reverse Current (Note 3) i mA R (Rated dc Voltage, T = 25C) 0.3 C (Rated dc Voltage, T = 100C) 15 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.onsemi.com 2