NSBC115TPDP6 Complementary Bias Resistor Transistors R1 = 100 k , R2 = k NPN and PNP Transistors with Monolithic www.onsemi.com Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor (3) (2) (1) Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors a series base resistor and a R base emitter resistor. The BRT eliminates these individual 1 R 2 components by integrating them into a single device. The use of a BRT Q 1 can reduce both system cost and board space. Q 2 Features R 2 S and NSV Prefix for Automotive and Other Applications R 1 Requiring Unique Site and Control Change Requirements AEC-Q101 Qualified and PPAP Capable (4) (5) (6) Simplifies Circuit Design Reduces Board Space Reduces Component Count MARKING DIAGRAMS These Devices are PbFree, Halogen Free/BFR Free and are RoHS SOT963 Compliant M CASE 527AD MAXIMUM RATINGS 1 (T = 25C both polarities Q1 (PNP) and Q2 (NPN), unless otherwise noted) A J = Specific Device Code Rating Symbol Max Unit M = Date Code* CollectorBase Voltage V 50 Vdc CBO *Date Code orientation may vary depending upon CollectorEmitter Voltage V 50 Vdc CEO manufacturing location. Collector Current Continuous I 100 mAdc C Input Forward Voltage V 40 Vdc IN(fwd) Input Reverse Voltage V Vdc IN(rev) NPN 6 PNP 5 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping NSBC115TPDP6T5G SOT963 8,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: June, 2017 Rev. 1 DTC115TP/D JNSBC115TPDP6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit NSBC115TPDP6 (SOT963) One Junction Heated Total Device Dissipation P D T = 25C (Note 1) 231 mW A (Note 2) 269 Derate above 25C (Note 1) 1.9 mW/C (Note 2) 2.2 Thermal Resistance, (Note 1) R 540 C/W JA Junction to Ambient (Note 2) 464 NSBC115TPDP6 (SOT963) Both Junction Heated (Note 3) Total Device Dissipation P D T = 25C (Note 1) 339 mW A (Note 2) 408 Derate above 25C (Note 1) 2.7 mW/C (Note 2) 3.3 Thermal Resistance, (Note 1) R 369 C/W JA Junction to Ambient (Note 2) 306 Junction and Storage Temperature Range T , T 55 to +150 C J stg 2 1. FR4 100 mm , 1 oz. copper traces, still air. 2 2. FR4 500 mm , 1 oz. copper traces, still air. 3. Both junction heated values assume total power is sum of two equally powered channels. www.onsemi.com 2