NSBC143EDP6T5G ON Semiconductor

NSBC143EDP6T5G electronic component of ON Semiconductor Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NSBC143EDP6T5G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. NSBC143EDP6T5G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

Part No. NSBC143EDP6T5G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased DUAL NBRT
Datasheet: NSBC143EDP6T5G Datasheet (PDF)
Price (USD)
1: USD 0.6125 ea
Line Total: USD 0.61 
Availability : 3366
  
Ship by Wed. 15 Oct to Fri. 17 Oct
QtyUnit Price
1$ 0.6125
10$ 0.4513
100$ 0.2587
500$ 0.1705
1000$ 0.1408
2500$ 0.1265
5000$ 0.11
8000$ 0.1001
24000$ 0.0924

Availability 3366
Ship by Wed. 15 Oct to Fri. 17 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6125
10$ 0.4513
100$ 0.2587
500$ 0.1705
1000$ 0.1408
2500$ 0.1265
5000$ 0.11
8000$ 0.1001
24000$ 0.0924

   
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We are delighted to provide the NSBC143EDP6T5G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSBC143EDP6T5G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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MUN5232DW1, NSBC143EDXV6, NSBC143EDP6 Dual NPN Bias Resistor Transistors www.onsemi.com R1 = 4.7 k , R2 = 4.7 k PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R 1 device and its external resistor bias network. The Bias Resistor R 2 Transistor (BRT) contains a single transistor with a monolithic bias Q 1 network consisting of two resistors a series base resistor and a base-emitter resistor. The BRT eliminates these individual Q 2 components by integrating them into a single device. The use of a BRT R 2 R 1 can reduce both system cost and board space. Features (4) (5) (6) Simplifies Circuit Design Reduces Board Space MARKING DIAGRAMS Reduces Component Count 6 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT363 7J M AEC-Q101 Qualified and PPAP Capable CASE 419B02 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant MAXIMUM RATINGS SOT563 7J M (T = 25C, common for Q and Q , unless otherwise noted) A 1 2 CASE 463A 1 Rating Symbol Max Unit Collector-Base Voltage V 50 Vdc CBO Collector-Emitter Voltage V 50 Vdc CEO SOT963 T M Collector Current Continuous I 100 mAdc C CASE 527AD 1 Input Forward Voltage V 30 Vdc IN(fwd) Input Reverse Voltage V 10 Vdc IN(rev) 7J/T = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code* device. If any of these limits are exceeded, device functionality should not be = Pb-Free Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) ORDERING INFORMATION *Date Code orientation may vary depending Device Package Shipping upon manufacturing location. MUN5232DW1T1G, SOT363 3,000/Tape & Reel SMUN5232DW1T1G NSBC143EDXV6T1G SOT563 4,000/Tape & Reel NSBC143EDP6T5G SOT963 8,000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2012 55 Publication Order Number: June, 2017 Rev. 1 DTC143ED/DMUN5232DW1, NSBC143EDXV6, NSBC143EDP6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN5232DW1 (SOT 363) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 37) 187 mW A (Note 38) 256 Derate above 25C (Note 37) 1.5 mW/C (Note 38) 2.0 Thermal Resistance, (Note 37) R 670 C/W JA Junction to Ambient (Note 38) 490 MUN5232DW1 (SOT363) BOTH JUNCTION HEATED (Note 39) Total Device Dissipation P D T = 25C (Note 37) 250 mW A (Note 38) 385 Derate above 25C (Note 37) 2.0 mW/C (Note 38) 3.0 Thermal Resistance, R C/W JA Junction to Ambient (Note 37) 493 (Note 38) 325 Thermal Resistance, R C/W JL Junction to Lead (Note 37) 188 (Note 38) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC143EDXV6 (SOT563) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 37) 357 mW A Derate above 25C (Note 37) 2.9 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 37) 350 NSBC143EDXV6 (SOT563) BOTH JUNCTION HEATED (Note 39) Total Device Dissipation P D T = 25C (Note 37) 500 mW A Derate above 25C (Note 37) 4.0 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 37) 250 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC143EDP6 (SOT963) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 40) 231 MW A (Note 41) 269 Derate above 25C (Note 40) 1.9 mW/C (Note 41) 2.2 Thermal Resistance, R C/W JA Junction to Ambient (Note 40) 540 (Note 41) 464 NSBC143EDP6 (SOT963) BOTH JUNCTION HEATED (Note 39) Total Device Dissipation P D T = 25C (Note 40) 339 MW A (Note 41) 408 Derate above 25C (Note 40) 2.7 mW/C (Note 41) 3.3 Thermal Resistance, R C/W JA Junction to Ambient (Note 40) 369 (Note 41) 306 Junction and Storage Temperature Range T , T 55 to +150 C J stg 37.FR4 Minimum Pad. 38.FR4 1.0 1.0 Inch Pad. 39.Both junction heated values assume total power is sum of two equally powered channels. 2 40.FR4 100 mm , 1 oz. copper traces, still air. 2 41.FR4 500 mm , 1 oz. copper traces, still air. www.onsemi.com 56

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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