NSD914XV2 High-Speed Switching Diode Features HighSpeed Switching Applications www.onsemi.com Lead Finish: 100% Matte Sn (Tin) Qualified Maximum Reflow Temperature: 260C Extremely Small SOD523 Package 1 2 CATHODE ANODE These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MARKING 2 MAXIMUM RATINGS (T = 25C) A DIAGRAM Rating Symbol Max Unit 1 5D M SOD523 Reverse Voltage V 100 V R CASE 502 12 Forward Current I 200 mAdc F Peak Forward Surge Current I 500 mAdc 5D = Specific Device Code FM(surge) M = Date Code Stresses exceeding those listed in the Maximum Ratings table may damage the = PbFree Package device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board (Note 1) P D ORDERING INFORMATION T = 25C 200 mW A Derate above 25C 1.57 mW/C Device Package Shipping Thermal Resistance Junction-to-Ambient R 635 C/W JA NSD914XV2T1G SOD523 3000 / Tape & (PbFree) Reel Junction and Storage Temperature Range T , T 55 to C J stg 150 NSD914XV2T5G SOD523 8000 / Tape & 1. FR4 Minimum Pad. (PbFree) Reel For information on tape and reel specifications, Characteristic Symbol Min Max Unit including part orientation and tape sizes, please OFF CHARACTERISTICS refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Reverse Breakdown Voltage V 100 Vdc (BR) (I = 100 Adc) BR Reverse Voltage Leakage Current I R (V = 20 Vdc) R 25 nAdc (V = 75 Vdc) R 5.0 Adc Diode Capacitance C 4.0 pF D (V = 0 V, f = 1.0 MHz) R Forward Voltage V 1.0 Vdc F (I = 10 mAdc) F Reverse Recovery Time t 4.0 ns rr (I = I = 10 mAdc) F R Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: August, 2018 Rev. 5 NSD914XV2T1/DNSD914XV2 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% DUT i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit 100 10 T = 150C A T = 85C A T = 125C A T = -40C A 1.0 10 T = 85C A 0.1 T = 25C A 1.0 T = 55C A 0.01 T = 25C A 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 V , FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 8.0 V , REVERSE VOLTAGE (VOLTS) R Figure 4. Capacitance www.onsemi.com 2 I , FORWARD CURRENT (mA) F C , DIODE CAPACITANCE (pF) D I , REVERSE CURRENT ( A) R