Product Information

NSPU5132MUTBG

NSPU5132MUTBG electronic component of ON Semiconductor

Datasheet
ESD Suppressors / TVS Diodes 13.5 V UNIDIRECTION AL ESD
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5712 ea
Line Total: USD 0.57

4726 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
6205 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

NSPU5132MUTBG
ON Semiconductor

1 : USD 0.2898
10 : USD 0.2533
100 : USD 0.2369
500 : USD 0.2345
1000 : USD 0.2272
3000 : USD 0.2226
6000 : USD 0.2226
9000 : USD 0.2226

4726 - WHS 2


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

NSPU5132MUTBG
ON Semiconductor

1 : USD 0.5712
10 : USD 0.4866
100 : USD 0.3586
500 : USD 0.2958
1000 : USD 0.2512
3000 : USD 0.2234
9000 : USD 0.2234
24000 : USD 0.2197

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Factory Pack Quantity :
Subcategory
LoadingGif

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Additional Infomation About Product

NSPU5132 13.5 V Unidirectional ESD and Surge Protection Device Features Unidirectional High Voltage ESD & Surge Protection Device Provides ESD Protection to IEC6100042 Level 4: www.onsemi.com 30 kV Contact Discharge Small Package (1.8 mm x 2.0 mm) High Voltage Zener Diode Protects Supply Rail up to 200 A (8/20 s) These Devices are PbFree and are RoHS Compliant UDFN6 APPLICATION DIAGRAM D4 SUFFIX Vcc (1,2,3,4) CASE 517CS BLOCK DIAGRAM GND (6,8) Cathode Anode DAP** GND (5,7) MARKING DIAGRAM 4W M 1 4W = Specific Device Code M = Date Code **Die Attach Pad on = PbFree Package back of package (connect to ground) ORDERING INFORMATION Device Package Shipping NSPU5132MUTBG UDFN6 3000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: November, 2018 Rev. 1 NSPU5132/DNSPU5132 PACKAGE / PINOUT DIAGRAMS Table 1. PIN DESCRIPTIONS 6Lead, UDFN8 Package Top View Bottom View (Pins Down View) (Pins Up View) Pin Name Description 12 3 4 6 5 1 V Cathode CC 2 V Cathode CC XX M 3 V Cathode 87 CC Pin 1 Marking 4 V Cathode CC 5 GND Anode 65 1 2 3 4 6 GND Anode 6Lead UDFN 7 GND Anode 8 GND Anode ELECTRICAL CHARACTERISTICS I Symbol Parameter I F I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM I Maximum Reverse Leakage Current V V R RWM I V R F I T V Breakdown Voltage I BR T I Test Current T V Maximum Temperature Coefficient of V BR BR I PP I Forward Current F V Forward Voltage I F F UniDirectional Surge Protection SPECIFICATIONS Table 2. ABSOLUTE MAXIMUM RATINGS Parameter Rating Units Operating Temperature Range 55 to +125 C Storage Temperature Range 65 to +150 C Peak Current (t = 8/20 s) 200 A p Peak Pulse Power (t = 8/20 s) 4800 W p Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS Junction Capacitance V I (V = 0 V, f = 1 MHz, C PP R (8 x 20 s) (Note 3) Pin 1 to Pin 5) Breakdown Voltage V (V) I V RWM R RWM V V (Note 2) I (mA) V (V) I (A) C (pF) (Note 1) A) BR T C PP J Device Device Name Marking Max Max Min Nom Max Max Typ Max NSPU5132 4W 13.5 0.5 13.6 15.5 17.5 1 24 200 1325 1550 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. A surge protector is normally selected according to the working peak reverse voltage (V ), which should be equal to or greater than the RWM DC or continuous peak operating voltage level. 2. V measured at pulse test current I at an ambient temperature of 25C. BR T 3. Surge current waveform per Figure 1. www.onsemi.com 2

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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