NSR02L30NXT5G ON Semiconductor

NSR02L30NXT5G electronic component of ON Semiconductor
NSR02L30NXT5G ON Semiconductor
NSR02L30NXT5G Schottky Diodes & Rectifiers
NSR02L30NXT5G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NSR02L30NXT5G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. NSR02L30NXT5G Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

Part No. NSR02L30NXT5G
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 204 FC SCHOTTKY DIODES
Datasheet: NSR02L30NXT5G Datasheet (PDF)
Price (USD)
1: USD 0.4625 ea
Line Total: USD 0.46 
Availability : 17953
  
Ship by Thu. 07 Aug to Mon. 11 Aug
QtyUnit Price
1$ 0.4625
10$ 0.2962
100$ 0.216
500$ 0.154
1000$ 0.1243
2500$ 0.1166
5000$ 0.1089
10000$ 0.0957
25000$ 0.0935

Availability 4471
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 643
Multiples : 1
QtyUnit Price
643$ 0.4046
927$ 0.2807
936$ 0.2778
1281$ 0.203
1408$ 0.1847
1568$ 0.1659
1887$ 0.1378
3000$ 0.0983


Availability 17953
Ship by Thu. 07 Aug to Mon. 11 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.4625
10$ 0.2962
100$ 0.216
500$ 0.154
1000$ 0.1243
2500$ 0.1166
5000$ 0.1089
10000$ 0.0957
25000$ 0.0935


Availability 9700
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 2891
Multiples : 1
QtyUnit Price
2891$ 0.1349
10000$ 0.1156
100000$ 0.0969


Availability 4850
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 2891
Multiples : 1
QtyUnit Price
2891$ 0.1349
10000$ 0.1156
100000$ 0.0969


Availability 1002908
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 2891
Multiples : 1
QtyUnit Price
2891$ 0.1349
10000$ 0.1156
100000$ 0.0969


Availability 4471
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 936
Multiples : 1
QtyUnit Price
936$ 0.2778
1281$ 0.203
1408$ 0.1847
1568$ 0.1659
1887$ 0.1378
3000$ 0.0983


Availability 630403
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 2891
Multiples : 1
QtyUnit Price
2891$ 0.1349
10000$ 0.1156
100000$ 0.0969


Availability 905010
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 2891
Multiples : 1
QtyUnit Price
2891$ 0.1349
10000$ 0.1156
100000$ 0.0969

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Series
Packaging
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Termination Style
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NSR02L30NXT5G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSR02L30NXT5G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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NSR02L30 Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 (Dual Silicon Nolead) package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100% utilization of the package area for active www.onsemi.com silicon, offering a significant performance per board area advantage compared to products in plastic molded packages. The low thermal 30 V SCHOTTKY resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. BARRIER DIODE Features Very Low Forward Voltage Drop 400 mV 10 mA 1 2 CATHODE ANODE Low Reverse Current 0.20 A 10 V VR 200 mA of Continuous Forward Current Power Dissipation of 312 mW with Minimum Trace ESD Rating Human Body Model: Class 3B ESD Rating Machine Model: Class C DSN2 Very High Switching Speed (0201) CASE 152AA Low Capacitance CT = 7 pF This is a HalideFree Device This is a PbFree Device MARKING DIAGRAMS Typical Applications PIN 1 LCD and Keypad Backlighting I230 Camera Photo Flash YYY Buck and Boost dcdc Converters Reverse Voltage and Current Protection I230 = Specific Device Code YYY = Year Code Clamping & Protection PIN 1 Markets Mobile Handsets AM MP3 Players Digital Camera and Camcorders A = Specific Device Code M = Date Code Notebook PCs & PDAs GPS MAXIMUM RATINGS ORDERING INFORMATION Rating Symbol Value Unit Device Package Shipping Reverse Voltage V 30 V R NSR02L30NXT5G DSN2 5000 / Tape & Reel Forward Current (DC) I 200 mA F (PbFree) Forward Surge Current I A FSM For information on tape and reel specifications, (60 Hz 1 cycle) 4.0 including part orientation and tape sizes, please ESD Rating: Human Body Model ESD >8.0 kV refer to our Tape and Reel Packaging Specifications Machine Model >400 V Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2010 1 Publication Order Number: May, 2017 Rev. 3 NSR02L30/DNSR02L30 THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 400 C/W JA Total Power Dissipation T = 25C P 312 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 170 C/W JA Total Power Dissipation T = 25C P 735 mW A D Storage Temperature Range T 40 to +125 C stg Junction Temperature T +150 C J 1. Mounted onto a 4 in square FR4 board 10 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR 4 board 1 in sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 0.2 R (V = 30 V) 3.0 R Forward Voltage V V F (I = 10 mA) 0.40 F (I = 200 mA) 0.58 F Total Capacitance 7.0 pF CT (V = 5.0 V, f = 1 MHz) R www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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