High Voltage Switching Diode BAS21XV2 The BAS21XV2 Switching Diode is a spinoff of our popular SOT23 threeleaded device. It is designed for switching applications and is housed in the SOD523 surface mount package. This device is www.onsemi.com ideal for lowpower surface mount applications, where board space is at a premium. HIGH VOLTAGE Features SWITCHING DIODE Extremely Small SOD523 Package NSV Prefix for Automotive and Other Applications Requiring 1 2 Unique Site and Control Change Requirements AECQ101 CATHODE ANODE Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MARKING 2 DIAGRAM MAXIMUM RATINGS 1 Rating Symbol Value Unit SOD523 XX CASE 502 Continuous Reverse Voltage V 250 Vdc R 12 Repetitive Peak Reverse Voltage V 250 Vdc RRM XX = Specific Device Code Continuous Forward Current I 200 mAdc F M = Date Code Peak Forward Surge Current I 625 mAdc FM(surge) Repetitive Peak Forward Current I 500 mA FRM (Pulse Wave = 1 sec, Duty Cycle = 66%) ORDERING INFORMATION NonRepetitive Peak Forward Current I A FSM Device Package Shipping (Square Wave, T = 25C prior to surge) J t = 1 s 5.0 BAS21XV2T5G SOD523 8000 / Tape & t = 1 ms 2.0 (PbFree) Reel t = 1 s 0.5 NSVBAS21XV2T5G SOD523 8000 / Tape & THERMAL CHARACTERISTICS (PbFree) Reel Characteristic Symbol Max Unit For information on tape and reel specifications, including part orientation and tape sizes, please Total Device Dissipation FR5 Board P D refer to our Tape and Reel Packaging Specifications T = 25C 250 mW A Brochure, BRD8011/D. Thermal Resistance JunctiontoAmbient R 500 C/W JA (Note 1) Junction and Storage Temperature Range T , T 55 to C J stg +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Mounted onto a 4 in square FR4 board 10 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: August, 2021 Rev. 1 BAS21XV2/D MBAS21XV2 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current I R (V = 200 Vdc) 0.01 0.1 Adc R (V = 200 Vdc, T = 150C) 10 100 R J Reverse Breakdown Voltage V (BR) (I = 100 Adc) 250 Vdc BR Forward Voltage V F (I = 100 mAdc) 1000 mV F (I = 200 mAdc) 1250 F Diode Capacitance C pF D (V = 0, f = 1.0 MHz) 5.0 R Reverse Recovery Time t ns rr (I = I = 30 mAdc, R = 100 ) 50 F R L Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H 10% rr 0.1 F 90% D.U.T. i = 3.0 mA R(REC) 50 OUTPUT 50 INPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 30 mA MEASURED F R at i = 3.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 30 mA. F Notes: 2. Input pulse is adjusted so I is equal to 30 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2