BAT54L Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. www.onsemi.com Extremely Fast Switching Speed 30 VOLTS Low Forward Voltage 0.35 Volts (Typ) I = 10 mAdc F SILICON HOTCARRIER NSV Prefix for Automotive and Other Applications Requiring DETECTOR AND SWITCHING Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable DIODES These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T = 125C unless otherwise noted) J Rating Symbol Value Unit SOT23 (TO236) Reverse Voltage V 30 Volts R CASE 318 STYLE 8 Forward Power Dissipation P F T = 25C 200 mW A Derate above 25C 2.0 mW/C 3 1 Forward Current (DC) I 200 Max mA F CATHODE ANODE NonRepetitive Peak Forward Current I mA FSM t < 10 msec 600 p MARKING DIAGRAM Repetitive Peak Forward Current I mA FRM Pulse Wave = 1 sec, 300 Duty Cycle = 66% JV3 M Junction Temperature T 55 to +150 C J 1 Storage Temperature Range T 55 to +150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the JV3 = Device Code device. If any of these limits are exceeded, device functionality should not be M = Date Code assumed, damage may occur and reliability may be affected. = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BAT54LT1G SOT23 3,000 / (PbFree) Tape & Reel NSVBAT54LT1G SOT23 3,000 / (PbFree) Tape & Reel BAT54LT3G SOT23 10,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 Publication Order Number: August, 2018 Rev. 16 BAT54LT1/DBAT54L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V Volts (BR)R (I = 10 A) 30 R Total Capacitance C pF T (V = 1.0 V, f = 1.0 MHz) 7.6 10 R Reverse Leakage I Adc R (V = 25 V) 0.5 2.0 R Forward Voltage V V F (I = 0.1 mA) 0.22 0.24 F (I = 1.0 mA) 0.29 0.32 F (I = 10 mA) 0.35 0.40 F (I = 30 mA) 0.41 0.50 F (I = 100 mA) 0.52 0.80 F Reverse Recovery Time t ns rr (I = I = 10 mAdc, I = 1.0 mAdc, Figure 1) 5.0 F R R(REC) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 +10 V 2 k 0.1 F I F t t T r p I F 100 H t T 10% 0.1 F rr DUT 90% 50 OUTPUT 50 INPUT i = 1 mA PULSE SAMPLING R(REC) I R GENERATOR OSCILLOSCOPE V R OUTPUT PULSE INPUT SIGNAL (I = I = 10 mA measured F R at i = 1 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2