BAT54W Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. www.onsemi.com Features 30 VOLT Extremely Fast Switching Speed SCHOTTKY BARRIER Extremely Low Forward Voltage 0.35 V (Typ) I = 10 mAdc F DETECTOR AND SWITCHING NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 DIODE Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (T = 125C unless otherwise noted) J SOT323 CASE 419 Rating Symbol Value Unit STYLE 2 Reverse Voltage V 30 V R Forward Power Dissipation P F T = 25C 200 mW A 3 1 Derate above 25C 1.6 mW/C CATHODE ANODE Forward Current (DC) I 200 Max mA F NonRepetitive Peak Forward I mA FSM MARKING DIAGRAM Current, t < 10 msec 600 p Repetitive Peak Forward Current I mA B4M FRM Pulse Wave = 1 sec, 300 Duty Cycle = 66% 1 Thermal Resistance, JunctiontoAmbient R C/W JA 2 B4 = Device Code 10 mm pad, 1 oz. Cu 285 2 M = Date Code* 100 mm pad, 1 oz. Cu 216 = PbFree Package Junction Temperature T 55 to C J (Note: Microdot may be in either location) 125 *Date Code orientation may vary depending up- Storage Temperature Range T 55 to C stg on manufacturing location. +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. Device Package Shipping BAT54WT1G SOT323 3,000 / (PbFree) Tape & Reel NSVBAT54WT1G SOT323 3,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: October, 2018 Rev. 12 BAT54WT1/DBAT54W ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V V (BR)R (I = 10 A) 30 R Total Capacitance C pF T (V = 1.0 V, f = 1.0 MHz) 7.6 10 R Reverse Leakage I Adc R (V = 25 V) 0.5 2.0 R Forward Voltage V V F (I = 0.1 mA) 0.22 0.24 F (I = 1.0 mA) 0.29 0.32 F (I = 10 mA) 0.35 0.40 F (I = 30 mA) 0.41 0.50 F (I = 100 mA) 0.52 0.80 F Reverse Recovery Time t ns rr (I = I = 10 mAdc, I = 1.0 mAdc, Figure 1) 5.0 F R R(REC) 820 +10 V 2 k 0.1 F I F t t T r p I F 100 H t T 10% 0.1 F rr DUT 90% 50 OUTPUT 50 INPUT i = 1 mA PULSE SAMPLING R(REC) I R GENERATOR OSCILLOSCOPE V R OUTPUT PULSE INPUT SIGNAL (I = I = 10 mA measured F R at i = 1 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2