Switching Diode, Dual, High Voltage, Common Cathode BAV23CL, NSVBAV23CL Features Moisture Sensitivity Level: 1 www.onsemi.com ESD Rating Human Body Model: Class 2 ESD Rating Machine Model: Class C ANODE Fast Switching Speed 1 Switching Application 3 2 CATHODE NSV Prefix for Automotive and Other Applications Requiring ANODE Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 2 Typical Applications SOT23 LCD TV CASE 318 Power Supply STYLE 9 Industrial MARKING DIAGRAM MAXIMUM RATINGS 3 Rating Symbol Value Unit AA M Continuous Reverse Voltage V 250 V R 1 2 Repetitive Peak Reverse Voltage V 250 V RRM Peak Forward Current I 400 mA AA = Specific Device Code F M = Date Code NonRepetitive Peak t = 1.0 s I 9.0 A FSM = PbFree Package Forward Surge Current t = 100 s 3.0 (Note: Microdot may be in either location) 1.7 t = 10 ms Peak Forward Surge Current I 625 mAdc FM(surge) ORDERING INFORMATION NonRepetitive Peak Per Human Body Model HBM 4.0 kV Device Package Shipping Per Machine Model MM 400 V BAV23CLT1G SOT23 3000 / Tape & Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) Reel device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. BAV23CLT3G SOT23 10000 / Tape & (PbFree) Reel NSVBAV23CLT1G SOT23 3000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: April, 2020 Rev. 4 BAV23CLT1/DBAV23CL, NSVBAV23CL THERMAL CHARACTERISTICS Characteristic Symbol Max Unit SINGLE HEATED Total Device Dissipation (Note 1) T = 25C P 265 mW A D Derate above 25C 2.1 mW/C Thermal Resistance, JunctiontoAmbient (Note 1) R 472 C/W JA Thermal Reference, JunctiontoAnode Lead (Note 1) R 263 C/W JL Thermal Reference, JunctiontoCase (Note 1) R 289 C/W JC Total Device Dissipation (Note 2) T = 25C P 345 mW A D Derate above 25C 2.7 mW/C Thermal Resistance, JunctiontoAmbient (Note 2) R 362 C/W JA Thermal Reference, JunctiontoAnode Lead (Note 2) R 251 C/W JL Thermal Reference, JunctiontoCase (Note 2) R 250 C/W JC DUAL HEATED (Note 3) Total Device Dissipation (Note 1) T = 25C P 390 mW A D Derate above 25C 3.1 mW/C Thermal Resistance, JunctiontoAmbient (Note 1) R 321 C/W JA Thermal Reference, JunctiontoAnode Lead (Note 1) 159 C/W R JL Thermal Reference, JunctiontoCase (Note 1) R 138 C/W JC Total Device Dissipation (Note 2) T = 25C P 540 mW A D Derate above 25C 4.3 mW/C Thermal Resistance, JunctiontoAmbient (Note 2) R 231 C/W JA Thermal Reference, JunctiontoAnode Lead (Note 2) R 148 C/W JL Thermal Reference, JunctiontoCase (Note 2) R 119 C/W JC Junction and Storage Temperature Range T , T 55 to +150 C J stg 2 1. FR-4 100 mm , 1 oz. copper traces, still air. 2 2. FR-4 500 mm , 2 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current I Adc R (V = 200 Vdc) 0.1 R (V = 200 Vdc, T = 150C) 100 R J Reverse Breakdown Voltage V 250 Vdc (BR) (I = 100 Adc) BR Forward Voltage V mV F (I = 100 mAdc) 1000 F (I = 200 mAdc) 1250 F Diode Capacitance C 5.0 pF T (V = 0, f = 1.0 MHz) R Reverse Recovery Time t 150 ns rr (I = I = 30 mAdc, R = 100 ) F R L Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2