NSVDTA114EM3T5G ON Semiconductor

NSVDTA114EM3T5G electronic component of ON Semiconductor Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NSVDTA114EM3T5G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. NSVDTA114EM3T5G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

Part No. NSVDTA114EM3T5G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased PNP Bipolar Digital Transistor (BRT)
Datasheet: NSVDTA114EM3T5G Datasheet (PDF)
Price (USD)
1: USD 0.3 ea
Line Total: USD 0.3 
Availability : 5341
  
Ship by Fri. 14 Nov to Tue. 18 Nov
QtyUnit Price
1$ 0.3
10$ 0.185
100$ 0.1116
500$ 0.0748
1000$ 0.0583
5000$ 0.0528
8000$ 0.0396
24000$ 0.0374

Availability 5341
Ship by Fri. 14 Nov to Tue. 18 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3
10$ 0.185
100$ 0.1116
500$ 0.0748
1000$ 0.0583
5000$ 0.0528
8000$ 0.0396
24000$ 0.0374

   
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We are delighted to provide the NSVDTA114EM3T5G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSVDTA114EM3T5G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors (BRT) R1 = 10 k , R2 = 10 k www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT) contains a single transistor with a monolithic bias (INPUT) R2 network consisting of two resistors a series base resistor and a base emitter resistor. The BRT eliminates these individual components by PIN 2 integrating them into a single device. The use of a BRT can reduce EMITTER (GROUND) both system cost and board space. Features MARKING DIAGRAMS Simplifies Circuit Design Reduces Board Space SC59 XX M CASE 318D Reduces Component Count STYLE 1 S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AEC-Q101 Qualified and PPAP Capable SOT23 These Devices are PbFree, Halogen Free/BFR Free and are RoHS XXX M CASE 318 Compliant STYLE 6 1 MAXIMUM RATINGS (T = 25C) A Rating Symbol Max Unit SC70/SOT323 XX M CASE 419 CollectorBase Voltage V 50 Vdc CBO STYLE 3 CollectorEmitter Voltage V 50 Vdc 1 CEO Collector Current Continuous I 100 mAdc C SC75 XX M CASE 463 Input Forward Voltage V 40 Vdc IN(fwd) STYLE 1 1 Input Reverse Voltage V 10 Vdc IN(rev) Stresses exceeding those listed in the Maximum Ratings table may damage the SOT723 device. If any of these limits are exceeded, device functionality should not be XX M CASE 631AA assumed, damage may occur and reliability may be affected. STYLE 1 1 SOT1123 X M CASE 524AA 1 STYLE 1 XXX = Specific Device Code M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation may vary depending up- on manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2000 1 Publication Order Number: July, 2018 Rev. 9 DTA114E/DMUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Table 1. ORDERING INFORMATION Device Part Marking Package Shipping MUN2111T1G, SMUN2111T1G 6A SC59 3000 / Tape & Reel (PbFree) SMUN2111T3G 6A SC59 10000 / Tape & Reel (PbFree) MMUN2111LT1G, SMMUN2111LT1G A6A SOT23 3000 / Tape & Reel (PbFree) MMUN2111LT3G, SMMUN2111LT3G A6A SOT23 10000 / Tape & Reel (PbFree) MUN5111T1G, SMUN5111T1G 6A SC70/SOT323 3000 / Tape & Reel (PbFree) DTA114EET1G, NSVDTA114EET1G 6A SC75 3000 / Tape & Reel (PbFree) DTA114EM3T5G, NSVDTA114EM3T5G 6A SOT723 8000 / Tape & Reel (PbFree) NSBA114EF3T5G F SOT1123 8000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 300 250 (1) SC75 and SC70/SOT323 Minimum Pad 200 (2) SC59 Minimum Pad (1) (2) (3) (4) (5) (3) SOT23 Minimum Pad 150 2 (4) SOT1123 100 mm , 1 oz. copper trace (5) SOT723 Minimum Pad 100 50 0 50 25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Figure 1. Derating Curve www.onsemi.com 2 P , POWER DISSIPATION (mW) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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