Y MUN5333DW1, NSBC143ZPDXV6, NSBC143ZPDP6 Complementary Bias Resistor Transistors www.onsemi.com R1 = 4.7 k , R2 = 47 k NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R 1 R 2 Transistor (BRT) contains a single transistor with a monolithic bias Q 1 network consisting of two resistors a series base resistor and a base-emitter resistor. The BRT eliminates these individual Q 2 components by integrating them into a single device. The use of a BRT R 2 can reduce both system cost and board space. R 1 Features (4) (5) (6) Simplifies Circuit Design Reduces Board Space MARKING DIAGRAMS Reduces Component Count S and NSV Prefix for Automotive and Other Applications 6 Requiring Unique Site and Control Change Requirements SOT363 AEC-Q101 Qualified and PPAP Capable* 33 M CASE 419B02 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 MAXIMUM RATINGS (T = 25C both polarities Q (PNP) & Q (NPN), unless otherwise noted) A 1 2 SOT563 33 M CASE 463A Rating Symbol Max Unit 1 Collector-Base Voltage V 50 Vdc CBO Collector-Emitter Voltage V 50 Vdc CEO Collector Current Continuous I 100 mAdc C SOT963 M Input Forward Voltage V 30 Vdc CASE 527AD IN(fwd) 1 Input Reverse Voltage V 5 Vdc IN(rev) Stresses exceeding those listed in the Maximum Ratings table may damage the 33/Y = Specific Device Code device. If any of these limits are exceeded, device functionality should not be M = Date Code* assumed, damage may occur and reliability may be affected. = Pb-Free Package ORDERING INFORMATION (Note: Microdot may be in either location) Device Package Shipping *Date Code orientation may vary depending MUN5333DW1T1G, SOT363 3,000/Tape & Reel upon manufacturing location. NSVMUN5333DW1T1G* NSVMUN5333DW1T3G* SOT363 10,000/Tape & Reel NSBC143ZPDXV6T1G SOT563 4,000/Tape & Reel NSVBC143ZPDXV6T1G* NSVBC143ZPDXV6T5G* SOT563 8,000/Tape & Reel NSBC143ZPDP6T5G SOT963 8,000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 27 Publication Order Number: June, 2017 Rev. 5 DTC143ZP/DMUN5333DW1, NSBC143ZPDXV6, NSBC143ZPDP6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN5333DW1 (SOT 363) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 19) 187 mW A (Note 20) 256 Derate above 25C (Note 19) 1.5 mW/C (Note 20) 2.0 Thermal Resistance, (Note 19) R 670 C/W JA Junction to Ambient (Note 20) 490 MUN5333DW1 (SOT363) BOTH JUNCTION HEATED (Note 21) Total Device Dissipation P D T = 25C (Note 19) 250 mW A (Note 20) 385 Derate above 25C (Note 19) 2.0 mW/C (Note 20) 3.0 Thermal Resistance, R C/W JA Junction to Ambient (Note 19) 493 (Note 20) 325 Thermal Resistance, R C/W JL Junction to Lead (Note 19) 188 (Note 20) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC143ZPDXV6 (SOT563) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 19) 357 mW A Derate above 25C (Note 19) 2.9 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 19) 350 NSBC143ZPDXV6 (SOT563) BOTH JUNCTION HEATED (Note 21) Total Device Dissipation P D T = 25C (Note 19) 500 mW A Derate above 25C (Note 19) 4.0 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 19) 250 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC143ZPDP6 (SOT963) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 22) 231 MW A (Note 23) 269 Derate above 25C (Note 22) 1.9 mW/C (Note 23) 2.2 Thermal Resistance, R C/W JA Junction to Ambient (Note 22) 540 (Note 23) 464 NSBC143ZPDP6 (SOT963) BOTH JUNCTION HEATED (Note 21) Total Device Dissipation P D T = 25C (Note 22) 339 MW A (Note 23) 408 Derate above 25C (Note 22) 2.7 mW/C (Note 23) 3.3 Thermal Resistance, R C/W JA Junction to Ambient (Note 22) 369 (Note 23) 306 Junction and Storage Temperature Range T , T 55 to +150 C J stg 19.FR4 Minimum Pad. 20.FR4 1.0 1.0 Inch Pad. 21.Both junction heated values assume total power is sum of two equally powered channels. 2 22.FR4 100 mm , 1 oz. copper traces, still air. 2 23.FR4 500 mm , 1 oz. copper traces, still air. www.onsemi.com 28