NSVRB751V40T1G ON Semiconductor

RB751V40T1G Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. RB751V40T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V 30 Volts (BR)R (I = 10 A) R Total Capacitance C 2.0 2.5 pF T (V = 1.0 V, f = 1.0 MHz) R Reverse Leakage I 300 500 nAdc R (V = 30 V) R Forward Voltage V 0.28 0.37 Vdc F (I = 1.0 mAdc) F 820 +10 V 2 k 0.1 F I F I F 100 H t t t r p t t 0.1 F rr 10% DUT 50 OUTPUT 50 INPUT 90% i = 1 mA PULSE SAMPLING R(REC) I R GENERATOR OSCILLOSCOPE OUTPUT PULSE V R (I = I = 10 mA measured F R INPUT SIGNAL at i = 1 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit