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Semiconductors
Discrete Semiconductors
Transistors
MOSFET
Product Information
NTBG1000N170M1
Hot
Images are for reference only
See Product Specifications
Datasheet
MOSFET SIC 1700V MOS 1O IN TO263-7L
Manufacturer:
ON Semiconductor
Large
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges
Price (USD)
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*
1:
USD 4.5885 ea
Line Total: USD 4.59
169
-
Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ:
1
Multiples:
1
Pack Size:
1
More Buying Options & Price Grid(s)
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Availability
Price
Buy Price
Quantity
754
-
WHS 1
Ships to you between Fri. 31 May to Tue. 04 Jun
MOQ :
1
Multiples :
1
NTBG1000N170M1
ON Semiconductor
1 : USD 5.327410 : USD 4.473125 : USD 4.224100 : USD 3.6189250 : USD 3.4171500 : USD 3.2154800 : USD 2.75272400 : USD 2.58664800 : USD 2.4798
Read More Specifications
Manufacturer
ON Semiconductor
ON Semiconductor
Product Category
MOSFET
MOSFET
Id - Continuous Drain Current
4.3 A
4.3 A
Vds - Drain-Source Breakdown Voltage
1.7 kV
1.7 kV
Rds On - Drain-Source Resistance
960 mOhms
960 mOhms
Transistor Polarity
N - Channel
N - Channel
Vgs th - Gate-Source Threshold Voltage
4.3 V
4.3 V
Minimum Operating Temperature
- 55 C
- 55 C
Maximum Operating Temperature
+ 175 C
+ 175 C
Pd - Power Dissipation
51 W
51 W
Mounting Style
SMD/SMT
SMD/SMT
Package / Case
D2PAK - 7L
D2PAK - 7L
Packaging
Reel , Cut Tape
Reel , Cut Tape
Technology
SiC
SiC
Number of Channels
1 Channel
1 Channel
Vgs - Gate-Source Voltage
- 15 V , + 25 V
- 15 V , + 25 V
Qg - Gate Charge
13.9 nC
13.9 nC
Channel Mode
Enhancement
Enhancement
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