About SiC MOSFETs

SiC MOSFETs

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Image  Information Image Stock Code(▲▼)Description
Manufacturer
Global Stock ⓘ (▲▼)Price(USD

(Ex. GST)(▲▼)
Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
NTH4L080N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 43213
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USD 7.766

Multiples of: 450

Through Hole N - Channel1 Channel1.2 kV29 A110 mOhms- 15 V , + 25 V4.3 V56 nC- 55 C+ 175 C170 WEnhancement EliteSiC
C2M0280120D


SiC MOSFETs SIC MOSFET 1200V RDS ON 280 mOhm
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Wolfspeed Availability : 5331
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USD 6.215

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV10 A280 mOhms- 10 V , + 25 V2.8 V5.6 nC- 55 C+ 150 C62.5 WEnhancement Z - FET
C3M0065090D


SiC MOSFETs G3 SiC MOSFET 900V, 65mOhm
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Wolfspeed Availability : 5052
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USD 11.875

Multiples of: 1

Through Hole N - Channel1 Channel900 V36 A90 mOhms- 8 v , + 18 V1.8 V30.4 nC- 55 C+ 150 C125 WEnhancement  
IPT60R037CM8XTMA1


SiC MOSFETs Y
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Infineon Availability : 3795
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USD 3.377

Multiples of: 1

SMD/SMT N - Channel1 Channel600 V70 A37 mOhms- 20 V , + 20 V4.7 V79 nC- 55 C+ 150 C390 WEnhancement CoolMOS
SCTH90N65G2V-7


SiC MOSFETs Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ TJ = 25C)
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STMicroelectronics Availability : 3533
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USD 27.1747

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V90 A26 mOhms- 10 V , + 22 V1.9 V157 nC- 55 C+ 175 C330 WEnhancement  
SCT2750NYTB


SiC MOSFETs N-Ch 1700V 6A 57W SiC Silicon Carbide
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ROHM Availability : 3213
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USD 3.9792

Multiples of: 1

Smd/Smt N - Channel1 Channel1700 V5.9 A750 mOhms22 V1.6 V17 nC + 175 C57 WEnhancement  
G3R350MT12D


SiC MOSFETs 1200V 350mohm TO-247-3 G3R SiC MOSFET
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GeneSiC Semiconductor Availability : 2817
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USD 3.421

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV10 A350 mOhms- 5 V , + 15 V2.7 V10 nC- 55 C+ 175 C63 WEnhancement  
G3R60MT07K


SiC MOSFETs 750V 60mohm TO-247-4 G3R SiC MOSFET
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GeneSiC Semiconductor Availability : 2748
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USD 8.7696

Multiples of: 1

Through Hole N - Channel1 Channel750 V37 A60 mOhms- 5 V , + 15 V2.5 V47 nC- 55 C+ 175 C127 WEnhancement  
G3R160MT12D


SiC MOSFETs 1200V 160mohm TO-247-3 G3R SiC MOSFET
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GeneSiC Semiconductor Availability : 2741
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USD 4.785

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV19 A160 mOhms- 5 V , + 15 V2.7 V23 nC- 55 C+ 175 C106 WEnhancement  
C3M0120090J-TR


SiC MOSFETs G3 SiC MOSFET/ Reel 900V, 120 mOhm
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Wolfspeed Availability : 2739
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USD 8.2365

Multiples of: 1

             Enhancement  
C3M0120065J


SiC MOSFETs SiC, MOSFET, 120mohm, 650V, TO-263-7, Industrial
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Wolfspeed Availability : 2697
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USD 5.5973

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V21 A120 mOhms- 4 V , + 15 V3.6 V26 nC- 40 C+ 175 C86 WEnhancement  
G2R1000MT17D


SiC MOSFETs 1700V 1000mohm TO-247-3 G2R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor Availability : 2683
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USD 4.0014

Multiples of: 1

Through Hole N - Channel1 Channel1.7 kV5 A1 Ohms- 5 V , + 20 V4.5 V11 nC- 55 C+ 175 C44 WEnhancement  
SCT3120AW7TL


SiC MOSFETs 650V 21A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
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ROHM Availability : 2649
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USD 6.9664

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V21 A156 mOhms- 4 V , + 22 V5.6 V38 nC-+ 175 C100 WEnhancement  
NVHL160N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247-3L Silicon Carbide MOSFET, N?Channel, 1200 V, 160 m?, TO247?3L
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ON Semiconductor Availability : 2545
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USD 6.721

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV17 A224 mOhms- 15 V , + 25 V4.3 V34 nC- 55 C+ 175 C119 WEnhancement EliteSiC
C3M0075120J


SiC MOSFETs SIC MOSFET 1200V 75 mOhm TO-263-7
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Wolfspeed Availability : 2448
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USD 12.738

Multiples of: 1

Smd/Smt N - Channel1 Channel1.2 kV30 A75 mOhms15 v , - 4 V1.7 V51 nC- 55 C+ 150 C113.6 WEnhancement  
IMBG120R350M1HXTMA1


N-Channel 1.2kV 4.7A (Tc) 65W (Tc) Surface Mount PG-TO263-7-12
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Infineon Availability : 2162
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USD 3.2101

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV4.7 A468 mOhms- 7 V , + 23 V5.7 V5.9 nC- 55 C+ 175 C65 WEnhancement CoolSiC
IMBF170R450M1XTMA1


SiC MOSFETs Y
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Infineon Availability : 2084
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USD 3.1696

Multiples of: 1

SMD/SMT N - Channel1 Channel1.7 kV9.8 A450 mOhms- 10 V , + 20 V4.5 V11 nC- 55 C+ 175 C107 WEnhancement CoolSiC
SCT3160KW7TL


SiC MOSFETs 1200V 17A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
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ROHM Availability : 2014
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USD 6.8438

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV17 A208 mOhms- 4 V , + 22 V5.6 V42 nC-+ 175 C100 WEnhancement  
SCT4026DW7TL


SiC MOSFETs TO263 750V 51A N-CH SIC
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ROHM Availability : 1947
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USD 13.7243

Multiples of: 1

SMD/SMT N - Channel1 Channel750 V51 A26 mOhms- 4 V , + 21 V4.8 V94 nC + 175 C150 WEnhancement  
SCT4045DW7TL


SiC MOSFETs TO263 750V 31A N-CH SIC
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ROHM Availability : 1944
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USD 8.4091

Multiples of: 1

SMD/SMT N - Channel1 Channel750 V31 A45 mOhms- 4 V , + 21 V4.8 V63 nC + 175 C93 WEnhancement  
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